IC IC SMD Type P-Channel 20-V (D-S) MOSFET KI5433DC Features Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS -20 Gate-Source Voltage VGS 8 Continuous Drain Current (TJ = 150 )* TA = 25 ID Maximum Power Dissipation * IS TA = 25 PD TA = 85 Operating Junction and Storage Temperature Range -2.1 -1.1 2.5 1.3 1.3 0.7 Symbol 5 sec RthJA Steady-State Maximum Junction-to-Foot (Drain) W 260 Parameter t A -55 to 150 TJ, Tstg Soldering Recommendations (Peak Temperature) Maximum Junction-to-Ambient* -3.5 -20 IDM Continuous Source Current * V -4.8 -4.8 TA = 85 Pulsed Drain Current -6.7 Unit Steady-State RthJF Typ Max 40 50 80 95 15 20 Unit /W * Surface Mounted on 1" X 1' FR4 Board. www.kexin.com.cn 1 IC IC SMD Type KI5433DC Electrical Characteristics Ta = 25 Parameter Symbol Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current On-State Drain Current* ID(on) Drain-Source On-State Resistance* rDS(on) Min Max -0.45 VDS = VGS, ID = -250 A VDS = 0 V, VGS = Typ Unit V 8V 100 nA VDS = -16V, VGS = 0 V -1 A VDS = -16V, VGS = 0 V, TJ = 85 -5 A VDS -20 - 5 V, VGS = -4.5 V A VGS = -4.5 V, ID = -4.8A 0.036 0.028 VGS = -2.5 V, ID = -4.2A 0.045 0.039 VGS = -1.8 V, ID = -1A 0.062 Forward Transconductance* gfs VDS = -10 V, ID = -4.8A 15 IS = -1.1 A, VGS = 0 V -0.8 -1.2 V 15 22 nC Schottky Diode Forward Voltage* VSD Total Gate Charge Qg Gate-Source Charge Qgs VDS = -10V, VGS = -4.5 V, ID = -4.8 A S 3.6 nC Gate-Drain Charge Qgd 2.5 Turn-On Delay Time td(on) 22 35 ns VDD = -10 V, RL = 10 29 45 ns ID = -1 A, VGEN = -4.5V, RG = 6 94 140 ns 54 80 ns 30 60 ns Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr * Pulse test; pulse width 2 IDSS Testconditons www.kexin.com.cn 300 s, duty cycle 2%. IF = -1.1 A, di/dt = 100 A/ s nC