Transistors IC IC IC IC MOSFE SMD SMD Type Type Product specification KRF7504 Features Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Symbol Rating Continuous Drain Current, VGS @ -4.5V @ TA = 25 Parameter ID -1.7 Continuous Drain Current, VGS @ -4.5V @ TA = 70 ID -1.4 Pulsed Drain Current *1 IDM -9.6 PD 1.25 Power Dissipation *2 @TA= 25 Linear Derating Factor 10 Gate-to-Source Voltage VGS 12 Peak Diode Recovery dv/dt *3 dv/dt -5.0 TJ, TSTG -55 to + 150 Junction and Storage Temperature Range Maximum Junction-to-Ambient *2 R JA 100 Unit A W m W/ V V/ns /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 Surface mounted on FR-4 board, t *3 ISD -1.2A, di/dt 100A/ s, VDD http://www.twtysemi.com 10sec V(BR)DSS,TJ 150 [email protected] 4008-318-123 1 of 2 IC Transistors IC IC IC MOSFE SMD SMD Type Type Product specification KRF7504 Electrical Characteristics Ta = 25 Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Breakdown Voltage Temp. Coefficient V(BR)DSS/ RDS(on) Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current VGS = 0V, ID = -250 A Min V/ 0.27 VGS = -2.7V, ID = -0.60A*1 0.40 gfs VDS = -10V, ID = -0.60A*1 1.3 V S VDS = -16V, VGS = 0V -1.0 VDS = -16V, VGS = 0V, TJ = 125 -25 VGS = -12V -100 VGS = 12V 100 Total Gate Charge Qg ID = -1.2A 5.4 8.2 Gate-to-Source Charge Qgs VDS = -16V 0.96 1.4 Gate-to-Drain ("Miller") Charge Qgd VGS = -4.5V 2.4 3.6 Turn-On Delay Time td(on) VDD = -10V 9.1 tr ID = -1.2A 35 td(off) RD = 8.3 38 Rg = 6 43 Rise Time Turn-Off Delay Time Fall Time tf Input Capacitance Ciss VGS = 0V 240 Output Capacitance Coss VDS = -15V 130 Reverse Transfer Capacitance Crss f = 1.0MHz 64 Continuous Source Current Body Diode) Unit V VGS = -4.5V, ID = -1.2A*1 -0.7 IGSS Max -0.012 TJ ID = -1mA,Reference to 25 VDS = VGS, ID = -250 A Gate-to-Source Reverse Leakage Typ -20 VGS(th) IDSS Gate-to-Source Forward Leakage Testconditons A nA nC ns pF IS -1.25 ISM -9.6 A Pulsed Source Current Body Diode) *2 Diode Forward Voltage VSD -1.2 TJ = 25 , IS = -1.2A, VGS = 0V*1 V Reverse Recovery Time trr TJ = 25 , IF =-1.2A 52 78 ns Reverse RecoveryCharge Qrr di/dt = 100A/ 63 95 nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) *1 Pulse width 300 s; duty cycle s*1 2%. *2 Repetitive rating; pulse width limited by max. junction temperature. http://www.twtysemi.com [email protected] 4008-318-123 2 of 2