Product specification KRF7104 Features Adavanced Process Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching 1: Source 1 3: Source 2 2: Gate 1 4: Gate 2 7,8: Drain 1 5,6: Drain 2 Absolute Maximum Ratings Ta = 25 Symbol Rating Continuous Drain Current, VGS @ 10V @ Ta = 25 Parameter ID -2.3 Continuous Drain Current, VGS @ 10V @ Ta = 70 ID -1.8 Pulsed Drain Current *1 IDM -10 PD 2.0 @TC= 25 Power Dissipation Linear Derating Factor 0.016 Gate-to-Source Voltage VGS Peak Diode Recovery dv/dt *3 dv/dt -3 TJ, TSTG -55 to + 150 Junction and Storage Temperature Range Maximum Junction-to-Ambient *2 R JA 12 62.5 Unit A W W/ V V/nS /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 Surface mounted on FR-4 board, t 10sec. *3 ISD V(BR)DSS,TJ -2.3A, di/dt 100A/ s, VDD http://www.twtysemi.com 150 [email protected] 4008-318-123 1 of 2 Product specification KRF7104 Electrical Characteristics Ta = 25 Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Breakdown Voltage Temp. Coefficient V(BR)DSS/ Static Drain-to-Source On-Resistance RDS(on) Gate Threshold Voltage Forward Transconductance Gate-to-Source Forward Leakage Max 0.19 0.25 VGS = -4.5V, ID = -0.50A*1 0.30 0.40 VDS = -15V, ID = -2.3A*1 -1.0 V/ -3.0 2.5 VDS = -16V, VGS = 0V -2.0 VDS = -16V, VGS = 0V, TJ = 55 -25 VGS = -12V -100 VGS = 12V 100 Qg ID = -2.3A 9.3 Gate-to-Source Charge Qgs VDS = -10V 1.6 Gate-to-Drain ("Miller") Charge Qgd VGS = -10V * 3.0 Turn-On Delay Time td(on) VDD = -10V 12 40 ID = -1.0A 16 40 RG = 6 42 90 RD = 10 * 30 50 tr Turn-Off Delay Time td(off) Fall Time tf Internal Source Inductance LS 4.0 Internal Drain Inductance LD 6.0 Input Capacitance Ciss VGS = 0V 290 Output Capacitance Coss VDS = -15V 210 Reverse Transfer Capacitance Crss f = 1.0MHz 67 V S Total Gate Charge Rise Time Unit V VGS = -10V, ID = -1.0A*1 VDS = VGS, ID = -250 A Gate-to-Source Reverse Leakage Typ -20 -0.015 gfs IGSS Min TJ ID = -1mA,Reference to 25 VGS(th) IDSS Drain-to-Source Leakage Current Testconditons VGS = 0V, ID = -250 A A nA 25 nC ns nH Continuous Source Current Body Diode) pF IS -2.0 ISM -9.2 A Pulsed Source Current Body Diode) *2 Diode Forward Voltage VSD TJ = 25 , IS = -1.5A, VGS = 0V*1 -1.2 V ns Reverse Recovery Time trr TJ = 25 , IF =-1.5A 69 100 Reverse RecoveryCharge Qrr di/dt = -100A/ 90 140 *1 Pulse width 300 s; duty cycle s*1 C 2%. *2 Repetitive rating; pulse width limited by max. junction temperature. http://www.twtysemi.com [email protected] 4008-318-123 2 of 2