IC IC MOSFE SMD Type Product specification SI9926BDY ■ Features SOP-8 ● RDS(on) = 0.027 Ω @ VGS = 4.5 V ● RDS(on) = 0.036 Ω @ VGS = 2.5 V. D1 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 D2 G2 G1 S1 S2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol 10 sec Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±10 V Continuous Drain Current ID Pulsed Drain Current IDM Maximum Power Dissipation @TA = 25℃ PD 8.2 6.2 30 2.0 1.14 1.3 @TA = 70℃ A A 0.72 W W Thermal Resistance,Junction-to-Ambient RθJA 110 ℃/W Jumction temperature and Storage temperature Tj.Tstg -55 to +150 ℃ http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 IC IC MOSFET SMD Type Product specification SI9926BDY ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Drain-Source Breakdown Voltage VDSS VGS = 0 V, ID = 250 μA Zero Gate Voltage Drain Current IDSS VDS = 20V , VGS = 0V Gate Threshold Voltage Gate-Body Leakage Drain-Source On-State Resistance * On-State Drain Current * Forward Transconductance * Min Typ Max 20 V 1 VDS = VGS , ID = 250uA 1.5 V IGSS VDS = 0V , VGS = ±8V ±100 nA VGS = 4.5V , ID = 8.5A 0.020 0.027 VGS = 2.5V , ID = 3.3A 0.029 0.036 RDS(on) ID(on) gfs 0.5 VDS = 5V , VGS = 4.5V 30 VDS = 15V , ID =8.2A 29 VDS = 10V , VGS = 4.5V , ID = 8.2A 2.5 Qg Gate-Drain Charge Qgd 3.2 Turn-On Delay Time td(on) 36 57 tr 52 78 32 50 15 25 td(off) Fall Time tf Maximum Continuous Drain-Source Diode Forward Current IS VSD 11 S Qgs Rise Time VDD = 10V, ID = 1A , VGS = 4.5V , RG = 6Ω,RL = 10 Ω IS = 1.7A, VGS = 0 V Ω A Gate-Source Charge Diode Forward Voltage * μA VGS(th) Total Gate Charge Turn-Off Delay Time Unit 0.8 20 nC ns 0.95 A 1.2 V * Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. ■ Marking Marking 9926B http://www.twtysemi.com [email protected] 4008-318-123 2 of 2