MOSFET IC IC Transistors MOSFE SMD Type Product specification KRF7501 Features Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage Rating Unit A VDS 20 Continuous Drain Current, VGS @ 10V,Ta = 25 ID 2.4 Continuous Drain Current, VGS @ 10V,TA = 70 ID 1.9 Pulsed Drain Current*1 A IDM 19 Power Dissipation Ta = 25 *1 PD 1.25 W Power Dissipation Ta = 70 *1 PD 0.8 W Linear Derating Factor 0.01 Gate-to-Source Voltage Single Pulse tp 10 s VGSM Gate-to-Source Voltage VGS Peak Diode Recovery dv/dt*1 Junction and Storage Temperature Range Junction-to-Ambient *2 * ISD 1.7A, di/dt 66A/ s, VDD *2 Surface mounted on FR-4 board, t http://www.twtysemi.com V(BR)DSS,TJ 16 12 dv/dt 5 TJ, TSTG -55 to + 150 R JA 100 W/ V V V/ns /W 150 10sec. [email protected] 4008-318-123 1 of 2 MOSFET IC IC Transistors MOSFE SMD Type Product specification KRF7501 Electrical Characteristics Ta = 25 Parameter Symbol Drain-to-Source Breakdown Voltage Testconditons V(BR)DSS Breakdown Voltage Temp. Coefficient V(BR)DSS/ Static Drain-to-Source On-Resistance RDS(on) Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current TJ Typ Max 20 V 0.041 ID = 1mA,Reference to 25 V/ VGS = 4.5V, ID = 1.7A*1 0.085 0.135 VGS = 2.7V, ID =0.85A*1 0.120 0.20 VDS = VGS, ID = 250 A 0.70 V gfs VDS = 10V, ID = 0.85A*1 2.6 S IGSS Gate-to-Source Reverse Leakage VDS = 16V, VGS = 0V 1.0 VDS = 16V, VGS = 0V, TJ = 125 25 VGS = 12V -100 VGS = -12V 100 Total Gate Charge Qg ID = 1.7A 5.3 8.0 Gate-to-Source Charge Qgs VDS = 16V 0.84 1.3 Gate-to-Drain ("Miller") Charge Qgd VGS = 4.5V,*1 2.2 3.3 Turn-On Delay Time td(on) VDD = 10V 5.7 tr ID = 1.7A 24 td(off) RG =6.0 15 tf RD = 5.7 16 Input Capacitance Ciss VGS = 0V 260 Output Capacitance Coss VDS = 15V 130 Reverse Transfer Capacitance Crss f = 1.0MHz 61 Rise Time Turn-Off Delay Time Fall Time Continuous Source Current Body Diode) Unit VGS(th) IDSS Gate-to-Source Forward Leakage VGS = 0V, ID = 250 A Min A nA nC ns pF IS 1.25 ISM 19 A Pulsed Source Current Body Diode) *2 Diode Forward Voltage VSD Reverse Recovery Time trr TJ = 25 , IF = 1.7A.VR=10V Reverse RecoveryCharge Qrr di/dt = 100A/ *1 Pulse width 300 s; duty cycle 1.2 V 39 59 ns 37 56 nC TJ = 25 , IS = 1.7A, VGS = 0V*1 s*1 2%. *2 Repetitive rating; pulse width limited bymax http://www.twtysemi.com [email protected] 4008-318-123 2 of 2