IC
IC
SMD Type
HEXFET Power MOSFET
KRF7555
Features
Trench Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Very Small SOIC Package
Low Profile ( 1.1mm)
Available in Tape & Reel
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
VDS
-20
ID
-4.3
Continuous Drain Current, VGS @ -4.5V @ TA = 70
ID
-3.4
Pulsed Drain Current *1
IDM
-34
Drain-Source Voltage
Continuous Drain Current, VGS @ -4.5V @ TA = 25
Power Dissipation *2
@TA= 25
Power Dissipation *2
@TA= 70
PD
1.25
0.8
Linear Derating Factor
10
Gate-to-Source Voltage
VGS
12
Unit
A
W
W
m W/
V
Single Pulse Avalanche Energy*2
EAS
36
Mj
Peak Diode Recovery dv/dt *3
dv/dt
1.1
V/ns
TJ, TSTG
-55 to + 150
Junction and Storage Temperature Range
Maximum Junction-to-Ambient *2
R
JA
100
/W
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 Surface mounted on FR-4 board, t
*3 ISD
-2.0A, di/dt
-140A/
s, VDD
10sec
V(BR)DSS,TJ
150
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IC
IC
SMD Type
KRF7555
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Breakdown Voltage Temp. Coefficient
V(BR)DSS/
Static Drain-to-Source On-Resistance
RDS(on)
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
VGS = 0V, ID = -250 A
Min
V/
0.055
VGS = -2.5V, ID = -3.4A*1
0.105
-0.6
VDS = -10V, ID = -0.8A*1
2.5
-1.2
VDS = -16V, VGS = 0V
-1.0
VDS = -16V, VGS = 0V, TJ = 125
-25
VGS = -12V
-100
VGS = 12V
100
Qg
ID = -3.0A
10
15
Gate-to-Source Charge
Qgs
VDS = -10V
2.1
3.1
Gate-to-Drain ("Miller") Charge
Qgd
VGS = -5.0V
2.5
3.7
Turn-On Delay Time
td(on)
VDD = -10V
10
tr
ID = -2.0A
46
td(off)
RD = 5.0
60
tf
Rg = 6.0
64
Input Capacitance
Ciss
VGS = 0V
1066
Output Capacitance
Coss
VDS = -10V
402
Reverse Transfer Capacitance
Crss
f = 1.0MHz
126
Rise Time
Fall Time
Continuous Source Current
Body Diode)
V
S
Total Gate Charge
Turn-Off Delay Time
Unit
V
VGS = -4.5V, ID = -4.3A*1
VDS = VGS, ID = -250 A
Gate-to-Source Reverse Leakage
Max
-0.005
TJ ID = -1mA,Reference to 25
gfs
IGSS
Typ
-20
VGS(th)
IDSS
Gate-to-Source Forward Leakage
Testconditons
A
nA
nC
ns
pF
IS
-1.3
ISM
-34
A
Pulsed Source Current
Body Diode) *2
Diode Forward Voltage
VSD
-1.2
V
Reverse Recovery Time
trr
TJ = 25 , IF =-2.5A
54
82
ns
Reverse RecoveryCharge
Qrr
di/dt = -100A/
41
61
nC
*1 Pulse width
300 s; duty cycle
TJ = 25 , IS = -1.6A, VGS = 0V*1
2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
2
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s*1