IC
IC
SMD Type
HEXFET Power MOSFET
KRF7607
Features
Generation V Technology
Ultra Low On-Resistance
N-Channel MOSFET
Very Small SOIC Package
Low Profile ( 1.1mm)
Available in Tape & Reel
Fast Switching
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
ID
20
Continuous Drain Current, VGS @ 4.5V,TA = 70
ID
6.5
Pulsed Drain Current*1
IDM
5.2
Continuous Drain Current, VGS @ 4.5V,Ta = 25
Power Dissipation Ta = 25
PD
A
W
1.2
Power Dissipation Ta = 70
Linear Derating Factor
Gate-to-Source Voltage
VGS
Junction and Storage Temperature Range
Junction-to-Ambient *
* Surface mounted on FR-4 board, t
1.8
Unit
0.014
W/
12
V
TJ, TSTG
-55 to + 150
R JA
70
/W
10sec.
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1
IC
IC
SMD Type
KRF7607
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Testconditons
V(BR)DSS
Breakdown Voltage Temp. Coefficient
V(BR)DSS/
Static Drain-to-Source On-Resistance
RDS(on)
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Typ
Max
20
V
0.016
ID = 1mA,Reference to 25
V/
VGS = 4.5V, ID = 6.5A*1
0.030
VGS = 2.5V, ID =5.2A*1
0.045
VDS = VGS, ID = 250 A
0.60
V
gfs
VDS = 10V, ID = 6.5A*1
13
S
IGSS
Gate-to-Source Reverse Leakage
VDS = 16V, VGS = 0V
1.0
VDS = 16V, VGS = 0V, TJ = 70
25
VGS = -12V
-100
VGS = 12V
100
Total Gate Charge
Qg
ID = 6.5A
15
22
Gate-to-Source Charge
Qgs
VDS = 10V
2.2
3.3
Gate-to-Drain ("Miller") Charge
Qgd
VGS = 5.0V,*1
3.5
5.3
Turn-On Delay Time
td(on)
VDD = 10V
8.5
Rise Time
Turn-Off Delay Time
Fall Time
tr
ID = 1.0A
11
td(off)
RG =6.0
36
tf
RD = 10
16
Input Capacitance
Ciss
VGS = 0V
1310
Output Capacitance
Coss
VDS = 15V
150
Reverse Transfer Capacitance
Crss
ƒ= 1.0MHz
36
Continuous Source Current
Body Diode)
Unit
VGS(th)
IDSS
Drain-to-Source Leakage Current
VGS = 0V, ID = 250 A
TJ
Min
A
nA
nC
ns
pF
IS
1.8
ISM
50
A
Pulsed Source Current
Body Diode) *2
Diode Forward Voltage
VSD
1.2
V
Reverse Recovery Time
trr
TJ = 25 , IF = 1.7A.VR=10V
19
29
ns
Reverse RecoveryCharge
Qrr
di/dt = 100A/
13
20
nC
*1 Pulse width
300 s; duty cycle
2%.
*2 Repetitive rating; pulse width limited bymax
2
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TJ = 25 , IS = 1.7A, VGS = 0V*1
s*1