TYSEMI KUK7105

Transistors
IC
SMD Type
Product specification
KUK7105-40AIE
TO-263
1 .2 7 -0+ 0.1.1
Unit: mm
Features
+0.1
1.27-0.1
+0.2
4.57-0.2
Integrated temperature sensor
0.1max
+0.1
1.27-0.1
5 .2 8 -0+ 0.2.2
Standard level compatible.
+0.1
0.81-0.1
2.54
2.54
+0.2
-0.2
+0.1
5.08-0.1
1 5 .2 5 -0+ 0.2.2
Q101 compliant
2 .5 4 -0+ 0.2.2
8 .7 -0+ 0.2.2
5 .6 0
Electrostatic discharge protection
+0.2
0.4-0.2
gate
11Gate
drain
22Drain
source
33Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain-source voltage
VDS
40
V
Drain-gate voltage RGS = 20 K
VDGS
40
V
Gate-source voltage
VGS
Drain current (DC) Tmb = 25 ,VGS = 10 V
ID
20
V
155
A
Drain current (DC) Tmb = 100 ,VGS = 10 V
ID
75
A
peak drain current *1
IDM
620
A
Total power dissipation Tmb = 25
Ptot
272
W
gate-source clamping current (continuous)
IGS(CL)
gate-source clamping current *3
Tstg, Tj
Storage & operating temperature
IDR
reverse drain current (DC) Tmb = 25
10
mA
50
mA
-55 to 175
155
A
75
A
IDRM
620
A
EDS(AL)S
1.46
J
Thermal resistance junction to mounting base
Rth j-mb
0.55
K/W
Thermal resistance junction to ambient
Rth j-a
50
K/W
pulsed reverse drain current *1
non-repetitive avalanche energy *2
* 1 Tmb = 25 ; pulsed; tp
10 ìs;
*2 unclamped inductive load; ID = 75 A;VDS
*3 tp = 5 ms;
40 V; VGS = 10 V; RGS = 50Ù;starting Tj = 25
= 0.01
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
Transistors
IC
SMD Type
Product specification
KUK7105-40AIE
Electrical Characteristics Ta = 25
Parameter
drain-source breakdown voltage
gate-source threshold voltage
Symbol
V(BR)DSS
VGS(th)
Testconditons
Min
ID = 0.25 mA; VGS = 0 V;Tj = 25
40
ID = 0.25 mA; VGS = 0 V;Tj = -55
36
ID = 1 mA; VDS = VGS;Tj = 25
2
ID = 1 mA; VDS = VGS;Tj = 175
1
Typ
IDSS
V
3
gate-source leakage current
V(BR)GSS IG =
IGSS
VGS =
VGS =
drain-source on-state resistance
RDSon
1 mA;-55
Tj
0.1
20
175
ratio of drain current to sense current
total gate charge
RD(Is)on
ID/Isense
10 V; VDS = 0 V;Tj = 175
.
VGS = 10 V; ID = 50 A;Tj = 25
Qgs
gate-to-drain (Miller) charge
Qgd
A
A
V
1000
nA
4.5
A
5
m
9.5
m
VGS = 10 V; ID = 100 mA;Tj = 25
0.98
1.08
1.18
VGS = 10 V; ID = 100 mA;Tj = 175
1.86
2.05
2.24
VGS
450
500
550
120
127
nC
19
22
nC
50
60
nC
4300
5000
pF
1400
1670
pF
820
1100
pF
10 V;-55
Tj
175
Qg(tot)
gate-to-source charge
10
10
VGS = 10 V; ID = 50 A;Tj = 175
drain-Isense on-state resistance
V
250
22
22
10 V; VDS = 0 V;Tj = 25
V
V
VDS = 40 V; VGS = 0 V;Tj = 175
gate-source breakdown voltage
4
4.4
VDS = 40 V; VGS = 0 V;Tj = 25
Unit
V
ID = 1 mA; VDS = VGS;Tj = -55
Zero gate voltage drain current
Max
VGS = 10 V; VDD = 32 V;ID = 25 A
input capacitance
Ciss
output capacitance
Coss
reverse transfer capacitance
Crss
turn-on delay time
td(on)
35
ns
tr
115
ns
155
ns
rise time
turn-off delay time
fall time
td(off)
VGS = 0 V; VDS = 25 V;f = 1 MHz
VDD = 30 V; RL = 1.2Ù;VGS = 10 V; RG =
10Ù
tf
110
ns
2.5
nH
nH
internal drain inductance
Ld
measured from upper edge of drain
mounting base to center of die
internal source inductance
Ls
measured from source lead to source
bond pad
7.5
Is = 25A; VGS = 0 V
0.85
source-drain (diode forward) voltage
VSD
1.2
V
reverse recovery time
trr
IS = 20 A; dIF/dt = -100 A/ìs;
96
ns
recovered charge
Qr
VGS = -10 V; VDS = 30 V
224
nC
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2