TYSEMI KUK7107

Transistors
IC
SMD Type
Product specification
KUK7107-55AIE
1 .2 7 -0+ 0.1.1
TO-263
Features
Integrated temperature sensor
Unit: mm
+0.1
1.27-0.1
+0.2
4.57-0.2
+0.1
0.81-0.1
2.54
2.54
+0.2
-0.2
1 5 .2 5 -0+ 0.2.2
0.1max
+0.1
1.27-0.1
5 .2 8 -0+ 0.2.2
Standard level compatible
2 .5 4 -0+ 0.2.2
8 .7 -0+ 0.2.2
Q101 compliant
5 .6 0
ESD protection
+0.1
5.08-0.1
+0.2
0.4-0.2
gate
11Gate
drain
22Drain
source
33Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain-source voltage
Symbol
Rating
Unit
VDS
55
V
Drain-gate voltage IDG = 250 ìA
VDGR
55
V
Gate-source voltage
VGS
20
V
Drain current (DC) Tmb = 25 ,VGS = 10 V
ID
140
A
Drain current (DC) Tmb = 100 ,VGS = 10 V
ID
75
A
peak drain current *1
IDM
560
A
Total power dissipation Tmb = 25
Ptot
272
W
10
mA
50
mA
gate-source clamping current (continuous)
IGS(CL)
gate-source clamping current *3
Tstg, Tj
Storage & operating temperature
IDR
reverse drain current (DC) Tmb = 25
-55 to 175
140
A
75
A
IDRM
560
A
EDS(AL)S
460
J
Vesd
6
KV
Thermal resistance junction to mounting base
Rth j-mb
0.55
K/W
Thermal resistance junction to ambient
Rth j-a
50
K/W
pulsed reverse drain current *1
non-repetitive avalanche energy *2
electrostatic discharge voltage; all pins *4
* 1 Tmb = 25 ; pulsed; tp
10 ìs;
*2 unclamped inductive load; ID = 68 A;VDS
*3 tp = 5 ms;
55 V; VGS = 10 V; RGS = 50Ù;starting Tj = 25
= 0.01
*4 Human Body Model; C = 100 pF; R = 1.5 k
http://www.twtysemi.com
[email protected]
4008-318-123
1of 2
Transistors
IC
SMD Type
Product specification
KUK7107-55AIE
Electrical Characteristics Ta = 25
Parameter
drain-source breakdown voltage
gate-source threshold voltage
Symbol
V(BR)DSS
VGS(th)
Testconditons
Min
Typ
IDSS
55
V
ID = 0.25 mA; VGS = 0 V;Tj = -55
50
V
ID = 1 mA; VDS = VGS;Tj = 25
2
ID = 1 mA; VDS = VGS;Tj = 175
1
3
gate-source leakage current
drain-source on-state resistance
V(BR)GSS
4.4
0.1
VDS = 55 V; VGS = 0 V;Tj = 25
IGSS
RDSon
IG =
1 mA;-55
Tj
10 V; VDS = 0 V;Tj = 25
VGS =
10 V; VDS = 0 V;Tj = 175
20
ratio of drain current to sense current
gate-to-source charge
ID/Isense
22
Tj
450
175
Qg(tot)
Qgs
A
A
V
1000
nA
10
.
VGS = 10 V; ID = 50 A;Tj = 25
VGS > 10 V;-55
V
10
22
5.8
VGS = 10 V; ID = 50 A;Tj = 175
total gate charge
V
250
175
VGS =
4
V
VDS = 55 V; VGS = 0 V;Tj = 175
gate-source breakdown voltage
Unit
ID = 0.25 mA; VGS = 0 V;Tj = 25
ID = 1 mA; VDS = VGS;Tj = -55
Zero gate voltage drain current
Max
VGS = 10 V; VDD = 44 V;ID = 25 A
500
A
7
m
14
m
550
116
nC
19
nC
gate-to-drain (Miller) charge
Qgd
50
nC
input capacitance
Ciss
4500
pF
output capacitance
Coss
960
pF
reverse transfer capacitance
Crss
510
pF
turn-on delay time
td(on)
36
ns
tr
115
ns
159
ns
111
ns
rise time
turn-off delay time
td(off)
VGS = 0 V; VDS = 25 V;f = 1 MHz
VDD = 30 V; RL = 1.2 ;VGS = 10 V; RG =
10
fall time
tf
internal drain inductance
Ld
measured from upper edge of drain
mounting base to center of die
2.5
nH
internal source inductance
Ls
measured from source lead to source
bond pad
7.5
nH
Is = 25A; VGS = 0 V
0.85
source-drain (diode forward) voltage
VSD
1.2
V
reverse recovery time
trr
IS = 20 A; dIF/dt = -100 A/ìs;
80
ns
recovered charge
Qr
VGS = -10 V; VDS = 30 V
200
nC
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2