Product specification 2SC2412K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Low Cob.Cob=2.0pF (Typ.) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V Collector current IC 0.15 A W Collector power dissipation PC 0.2 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage VCBO IC=50ìA 60 Collector-emitter breakdown voltage VCEO IC=1mA 50 V Emitter-base breakdown voltage VEBO IE=50ìA 7 V Collector cutoff current ICBO VCB=60V 0.1 ìA Emitter cutoff current IEBO VEB=7V 0.1 ìA hFE VCE=6V, IC=1mA DC current Gain Collector-emitter saturation voltage V 120 560 VCE(sat) IC/IB=50mA/5mA Collector Output Capacitance Cob Transition frequency VCE=12V, IE=0A, f=1MHz fT VCE=12V, IE=-2mA, f=100MHz 2 180 0.4 V 3.5 pF MHz ■ hFE Classification Marking BQ BR BS Rank Q R S hFE 120～270 180～390 270～560 http://www.twtysemi.com [email protected] 4008-318-123 1 of 3 Product specification 2SC2412K Typical Characteristics 20 10 25°C −55°C 5 2 1 0.5 10 COLLECTOR CURRENT : IC (mA) VCE=6V Ta=100°C COLLECTOR CURRENT : IC (mA) 50 24µA 21µA 6 18µA 15µA 12µA 4 9µA 6µA 2 3µA 0.1 0 IB=0A 12 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 1.6 500 Fig.2 Grounded emitter propagation characteristics Ta=25°C VCE=5V 3V 1V 200 100 50 20 10 0.2 0.5 1 2 5 10 20 50 100 200 0.5 0.02 0.01 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) Fig.5 Collector-emitter saturation voltage vs. collector current http://www.twtysemi.com [email protected] 20 Grounded emitter output characteristics Ta=25°C 0.2 IC/IB=50 20 10 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) Fig. 4 Collector-emitter saturation voltage vs. collector current TRANSITION FREQUENCY : fT (MHz) Ta=100°C 25°C −55°C 0.05 0.2 16 IC/IB=10 0.2 0.1 8 0.5 COLLECTOR CURRENT : IC (mA) Fig.3 DC current gain vs. collector current 4 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.1 DC CURRENT GAIN : hFE 27µA 8 0.2 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 30µA Ta=25°C Ta=25°C VCE=6V 500 200 100 50 −0.5 −1 −2 −5 −10 −20 −50 −100 EMITTER CURRENT : IE (mA) Fig.6 Gain bandwidth product vs. emitter current 4008-318-123 2 of 3 Product specification 20 10 Ta=25°C f=1MHz IE=0A IC=0A Cib 5 2 Co b 1 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage http://www.twtysemi.com [email protected] BASE COLLECTOR TIME CONSTANT : Cc·rbb' (ps) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 2SC2412K Ta=25°C f=32MHZ VCB=6V 200 100 50 20 10 −0.2 −0.5 −1 −2 −5 −10 EMITTER CURRENT : IE (mA) Fig.8 Base-collector time constant vs. emitter current 4008-318-123 3 of 3