Product specification PZT3904 SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 6.50 ● Collector Power Dissipation: PC=1W ● Collector Current: IC= 200mA +0.1 3.00-0.1 +0.15 1.65-0.15 ■ Features Unit: mm +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 ● Complementary PNP Type Available(PZT3906) 4 1 Base 2 Collector 1 3 2 +0.1 0.70-0.1 2.9 3 Emitter 4 Collector 4.6 ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit Collector - Base Voltage Parameter VCBO 60 V Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 V Collector Current - Continuous IC 200 mA Collector Power Dissipation PC 1 W Junction Temperature TJ 150 ℃ Storage Temperature Tstg -55 to 150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditons Min Typ Max Unit Collecto- base breakdown voltage VCBO Ic= 10 μA， IE=0 60 V Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB=0 40 V Emitter - base breakdown voltage VEBO IE= 10μA， IC=0 6 Collector cut-off current IcBO VCB= 60 V , IE=0 0.1 μA Collector cut-off current IcEO VCE= 30 V , VBE(off)=3V 50 nA Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 μA DC current gain hFE VCE= 1V, IC= 10mA 100 VCE= 1V, IC= 50mA 60 V 300 Collector-emitter saturation voltage VCE(sat) IC=50 mA, IB= 5mA 0.4 V Base - emitter saturation voltage VBE(sat) IC= 50 mA, IB= 5mA 0.95 V Delay time td VCC=3.0V,VBE=-0.5V 35 Rise time tr IC=10mA,IB1=-IB2=1.0mA 35 Storage time ts VCC=3.0V,IC=10mA 200 Fall time tf IB1=-IB2=1.0mA 50 Transition frequency fT VCE= 20V, IC= 10mA,f=100MHz 300 ns ns MHz ■ Marking Marking 3904 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1