Product specification 2N3904 Features NPN silicon epitaxial planar transistor for switching and Amplifier applications 1 EMITTER 2 BASE 3 COLLECTOR Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 V Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 V Collector Current - Continuous IC 0.2 A Collector Power Dissipation PC 0.625 W Junction Temperature TJ 150 Storage Temperature Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collecto- base breakdown voltage VCBO Ic= 100 ìA Collector- emitter breakdown voltage VCEO Ic= 1 mA Emitter - base breakdown voltage VEBO IE= 10 A Collector cut-off current IcBO VCB= 60 V , IE=0 Collector cut-off current IcEO Emitter cut-off current IEBO DC current gain hFE IE=0 IB=0 IC=0 Min Typ Max 60 Unit V 40 V 6 V 0.1 A VCE= 40 V , IB=0 0.1 A VEB= 5V , IC=0 0.1 A VCE= 1V, IC= 10mA 100 VCE= 1V, IC= 50mA 60 VCE= 1V, IC= 100mA 30 300 Collector-emitter saturation voltage VCE(sat) IC=50 mA, IB= 5mA 0.3 V Base - emitter saturation voltage VBE(sat) IC= 50 mA, IB= 5mA 0.95 V Delay time td VCC=3.0V,VBE=-0.5V 35 Rise time tr IC=10mA,IB1=-IB2=1.0mA 35 Storage time ts VCC=3.0V,IC=10mA 200 Fall time tf IB1=-IB2=1.0mA 50 Transition frequency fT VCE= 20V, IC= 10mA,f=100MHz http://www.twtysemi.com [email protected] 300 4008-318-123 ns ns MHz 1 of 1