TYSEMI 2N3904

Product specification
2N3904
Features
NPN silicon epitaxial planar transistor for switching and
Amplifier applications
1 EMITTER
2 BASE
3 COLLECTOR
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
60
V
Collector - Emitter Voltage
VCEO
40
V
Emitter - Base Voltage
VEBO
6
V
Collector Current - Continuous
IC
0.2
A
Collector Power Dissipation
PC
0.625
W
Junction Temperature
TJ
150
Storage Temperature
Tstg
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collecto- base breakdown voltage
VCBO
Ic= 100 ìA
Collector- emitter breakdown voltage
VCEO
Ic= 1 mA
Emitter - base breakdown voltage
VEBO
IE= 10 A
Collector cut-off current
IcBO
VCB= 60 V , IE=0
Collector cut-off current
IcEO
Emitter cut-off current
IEBO
DC current gain
hFE
IE=0
IB=0
IC=0
Min
Typ
Max
60
Unit
V
40
V
6
V
0.1
A
VCE= 40 V , IB=0
0.1
A
VEB= 5V , IC=0
0.1
A
VCE= 1V, IC= 10mA
100
VCE= 1V, IC= 50mA
60
VCE= 1V, IC= 100mA
30
300
Collector-emitter saturation voltage
VCE(sat) IC=50 mA, IB= 5mA
0.3
V
Base - emitter saturation voltage
VBE(sat) IC= 50 mA, IB= 5mA
0.95
V
Delay time
td
VCC=3.0V,VBE=-0.5V
35
Rise time
tr
IC=10mA,IB1=-IB2=1.0mA
35
Storage time
ts
VCC=3.0V,IC=10mA
200
Fall time
tf
IB1=-IB2=1.0mA
50
Transition frequency
fT
VCE= 20V, IC= 10mA,f=100MHz
http://www.twtysemi.com
[email protected]
300
4008-318-123
ns
ns
MHz
1 of 1