Product specification MMBT4401 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ■ Features 0.4 3 1 0.55 ● Complementary PNP Type Available (MMBT4403) +0.1 1.3-0.1 +0.1 2.4-0.1 ● Ideal for Medium Power Amplification and Switching 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 6.0 V Collector current IC 600 mA Total Device Dissipation Alumina Substrate PD 300 mW RθJA 417 ℃/W TJ, Tstg -55 to150 ℃ Thermal Resistance, Junction?to?Ambient Junction and Storage Temperature http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Product specification MMBT4401 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditons Min Typ Max 60 Unit Collector-base breakdown voltage V(BR)CBO IC = 100μA, IE = 0 V Collector-emitter breakdown voltage V(BR)CEO IC = 1.0 mA, IB = 0 40 V Emitter-base breakdown voltage V(BR)EBO IE =100μA, IC = 0 6.0 V Collector cut-off current ICBO VCB=50 V, IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 μA hFE IC = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 150 mA, VCE = 1.0 V IC = 500 mA, VCE = 2.0 V DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * VCE(sat) VBE(sat) 20 40 80 100 40 300 IC = 150 mA, IB = 15 mA 0.4 IC = 500 mA, IB = 50 mA 0.75 IC = 150 mA, IB = 15 mA 0.95 IC = 500 mA, IB = 50 mA 1.2 250 V V Transition frequency fT IC = 20 mA, VCE = 10 V, f = 100 MHz MHz Delay time td VCC = 30 V, VEB = 2.0 V, Rise time tr IC = 150 mA, IB1 = 15 mA 20 ns Storage time ts VCC = 30 V, IC = 150 mA, 225 ns Fall time tf IB1 = IB2 = 15 mA 30 ns 15 ns * Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. ■ Marking Marking 2X http://www.twtysemi.com [email protected] 4008-318-123 2 of 2