TYSEMI MMBT4403

Product specification
MMBT4403
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
■ Features
0.4
3
1
0.55
● Complementary NPN Type Available (MMBT4401)
+0.1
1.3-0.1
+0.1
2.4-0.1
● Ideal for Medium Power Amplification and Switching
2
+0.1
0.95-0.1
+0.1
1.9-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
2.Emitter
+0.1
0.38-0.1
0-0.1
1.Base
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-40
V
Collector-emitter voltage
VCEO
-40
V
Emitter-base voltage
VEBO
-5
V
IC
-600
mA
Collector current
Total Device Dissipation Alumina Substrate
PD
300
mW
Thermal Resistance, Junction?to?Ambient
RθJA
417
℃/W
TJ, Tstg
-55 to150
℃
Junction and Storage Temperature
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test conditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO IC = 100μA, IE = 0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO IC = 1.0 mA, IB = 0
-40
V
Emitter-base breakdown voltage
V(BR)EBO IE =100μA, IC = 0
-5
V
Collector cut-off current
ICBO
VCB=-35 V, IE=0
-0.1
μA
Emitter cut-off current
IEBO
VEB=-4V, IC=0
-0.1
μA
hFE
IC = -0.1 mA, VCE = -1.0 V
IC = -1.0 mA, VCE = -1.0 V
IC = -10 mA, VCE = -1.0 V
IC = -150 mA, VCE = -2.0 V
IC = -500 mA, VCE = -2.0 V
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
VCE(sat)
VBE(sat)
30
60
100
100
20
300
IC = -150 mA, IB = -15 mA
-0.4
IC = -500 mA, IB = -50 mA
-0.75
IC = 150 mA, IB = 15 mA
-0.95
IC = 500 mA, IB = 50 mA
-1.3
200
V
V
Transition frequency
fT
IC = 20 mA, VCE = 10 V, f = 100 MHz
Delay time
td
VCC = 30 V, VEB = 2.0 V,
15
MHz
ns
Rise time
tr
IC = 150 mA, IB1 = 15 mA
20
ns
Storage time
ts
VCC = 30 V, IC = 150 mA,
225
ns
Fall time
tf
IB1 = IB2 = 15 mA
30
ns
* Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
Product specification
MMBT4403
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test conditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO IC = 100μA, IE = 0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO IC = 1.0 mA, IB = 0
-40
V
Emitter-base breakdown voltage
V(BR)EBO IE =100μA, IC = 0
-5
V
Collector cut-off current
ICBO
VCB=-35 V, IE=0
-0.1
μA
Emitter cut-off current
IEBO
VEB=-4V, IC=0
-0.1
μA
hFE
IC = -0.1 mA, VCE = -1.0 V
IC = -1.0 mA, VCE = -1.0 V
IC = -10 mA, VCE = -1.0 V
IC = -150 mA, VCE = -2.0 V
IC = -500 mA, VCE = -2.0 V
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
VCE(sat)
VBE(sat)
30
60
100
100
20
300
IC = -150 mA, IB = -15 mA
-0.4
IC = -500 mA, IB = -50 mA
-0.75
IC = 150 mA, IB = 15 mA
-0.95
IC = 500 mA, IB = 50 mA
-1.3
200
V
V
Transition frequency
fT
IC = 20 mA, VCE = 10 V, f = 100 MHz
MHz
Delay time
td
VCC = 30 V, VEB = 2.0 V,
15
ns
Rise time
tr
IC = 150 mA, IB1 = 15 mA
20
ns
Storage time
ts
VCC = 30 V, IC = 150 mA,
225
ns
Fall time
tf
IB1 = IB2 = 15 mA
30
ns
* Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
■ Marking
Marking
2T
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2