Product specification MMST5551 SOT-323 Unit:mm 1.3±0.1 2 2.3±0.15 1.25±0.1 1 ■ Features 0.525 0.65 ● Ultra-Small Surface Mount Package 0.36 3 ● Ideal for Medium Power Amplification and Switching 0.3±0.1 ● Complementary PNP Type Available (MMST5401) 0.1 +0.05 -0.02 0.95±0.05 0.1max 2.1±0.1 1 Emitter 2 Base 3 Collector ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit Collector-base voltage Parameter VCBO 180 V Collector-emitter voltage VCEO 160 V Emitter-base voltage VEBO 6 V Collector current-continuous IC 0.6 A Collector Power Dissipation Pc 200 mW TJ, Tstg -55 to +150 ℃ Junction and storage temperature ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC = 100 μA, IE = 0 180 V Collector-emitter breakdown voltage * V(BR)CEO IC = 1.0 mA, IB = 0 160 V Emitter-base breakdown voltage V(BR)EBO IE = 10 μA, IC = 0 6 V Collector cutoff current ICBO VCB = 120 V, IE = 0 Emitter cutoff current IEBO VEB = 4.0 V, IC = 0 DC current gain hFE Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat) Transiston frequency fT IC = 1.0 mA, VCE = 5 V 80 IC = 10 mA, VCE = 5 V 100 IC = 50 mA, VCE = 5 V 30 50 nA 50 nA 300 IC = 10 mA, IB = 1.0 mA 0.15 IC = 50 mA, IB = 5.0 mA 0.2 IC = 10 mA, IB = 1.0 mA 1.0 IC = 50 mA, IB = 5.0 mA 1.0 VCE=10V,IC=10mA,f=100MHz 100 300 V V MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 6 pF Input capacitance Cib VBE=0.5V,IC=0,f=1MHz 20 pF Noise figure NF VCE=5V,Ic=0.25mA, f=10Hz to 15.7KHz,Rs=1kΩ 8 dB * Pulse Test: Pulse Width = 300 μs, Duty Cycle=2.0%. ■ Marking Marking K4N http://www.twtysemi.com [email protected] 4008-318-123 1 of 1