Product specification 2SC3361 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High breakdown voltage. 1 0.55 Fast switching speed. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 150 mA Collector current (pulse) ICP 400 mA Base current IB 40 mA Collector dissipation PC 150 mW Jumction temperature Tj 125 Storage temperature Tstg -55 to +125 http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Product specification 2SC3361 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current IcBO VCB = 40V , IE = 0 0.1 ìA Emitter cutoff current IEBO VEB = 4V , IC = 0 0.1 ìA DC current Gain hFE VCE = 6V , IC = 1mA fT VCE = 6V , IC = 1mA 100 MHz Cob VCB = 6V , f = 1MHz 2.7 pF VCE(sat) IC = 10mA , IB =1mA 0.1 0.4 V 0.75 1.1 V Gain bandwidth product Common base output capacitance Collector-to-emitter saturation voltage Base-to-emitter saturation voltage 90 VBE(sat) IC = 10mA , IB =1mA 400 Collector-to-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 60 V Collector-to-emitter breakdown voltage V(BR)CEO IC = 1mA , RBE = 50 V Emitter-to-base breakdown voltage V(BR)EBO IE = 10ìA , IC = 0 5 V Delay time td Rise time tr Storage time tstg Fall time tf 40 ns 80 ns 230 ns 160 ns hFE Classification Marking hFE S4 90 180 http://www.twtysemi.com S5 S6 135 270 200 400 [email protected] 4008-318-123 2 of 2