Transistors SMD Type Product specification MMSTA63 Features Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage Parameter VCBO -30 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -10 V Collector Current IC -500 mA Power Dissipation Pd 200 mW 625 /W Thermal Resistance, Junction to Ambient R Operating and Storage and Temperature Range JA Tj, TSTG -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-Base Breakdown Voltage VCBO IC = 100 A, IE = 0 Collector Cutoff Current ICBO VCB = -30V, IE = 0 -100 nA Collector Cutoff Current IEBO VCE = -10V, IC = 0 -100 nA DC Current Gain hFE -1.5 V IC = -10mA, VCE = -5V 5,000 IC = -100mA, VCE =5V 10,000 Collector-Emitter Saturation Voltage VCE(sat) IC = -100mA, IB = -100 A Base-Emitter Saturation Voltage VBE(sat) IC = -100mA,VCE=-5.0V Current Gain-Bandwidth Product fT -30 VCE = -5.0V, IC =-10mA,f = 100MHz V -2.0 125 V MHz Marking Marking K2E http://www.twtysemi.com [email protected] 4008-318-123 1of 3 Transistors SMD Type Product specification MMSTA63 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) PD, POWER DISSIPATION (mW) 200 150 100 50 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 IC = 1000 IB TA = -50°C TA = 25°C 0.70 0.65 0.60 0.55 0.50 TA = 150°C 0.45 0.40 0 0 25 50 75 100 150 125 175 1 200 10,000,000 VBE(ON), BASE EMITTER VOLTAGE (V) VCE = 5V TA = 150°C hFE, DC CURRENT GAIN 1,000,000 TA = 25°C TA = -50°C 10,000 1,000 100 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs Collector Current http://www.twtysemi.com 1000 IC, COLLECTOR CURRENT (mA) Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature 100,000 100 10 [email protected] 1.6 1.5 1.4 1.3 1.2 VCE = 5V 1.1 1.0 0.9 0.8 0.7 TA = -50°C TA = 25°C TA = 150°C 0.6 0.5 0.4 0.3 0.2 0.1 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Base Emitter Voltage vs. Collector Current 4008-318-123 2of 3 Transistors SMD Type Product specification MMSTA63 fT, GAIN BANDWIDTH PRODUCT (MHz) 1000 VCE = 5V 100 10 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5, Gain Bandwidth Product vs. Collector Current http://www.twtysemi.com [email protected] 4008-318-123 3of 3