Product specification DCP55-16-13 SOT-223 Unit: mm +0.2 3.50-0.2 +0.2 6.50-0.2 0.1max +0.05 0.90-0.05 ● Epitaxial Planar Die Construction ● Complementary PNP Type Available (DCP52) +0.1 3.00-0.1 ● Ideally Suited for Automated Assembly Processes +0.15 1.65-0.15 ■ Features +0.2 0.90-0.2 +0.3 7.00-0.3 4 ● Ideal for Medium Power Switching or Amplification Applications 1 1 base 3 2 +0.1 0.70-0.1 2.9 2 collector 4.6 3 emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit VCBO 60 V collector-emitter voltage VCEO 60 V emitter-base voltage V EBO 5 V collector current (DC) IC 1 A peak collector current (tP < 5ms) ICM 1.5 A collector-base voltage power dissipation PD 1 W RθJA 125 ℃/W junction temperature Tj 150 ℃ storage temperature T stg -55 to +150 ℃ thermal resistance from junction to ambient ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Testconditons Min V(BR)CBO I C= 0.1mA,IE=0 60 Collector-emitter breakdown voltage V(BR)CEO I C= 10mA,I B=0 60 Base-emitter breakdown voltage V (BR)EBO 5 Collector-base breakdown voltage I C= 10µA,I E=0 Typ Max Unit V Collector cut-off current ICBO I E = 0 A; VCB = 30 V 100 nA Emitter cut-off current IEBO I C = 0 A; V EB = 5 V 10 uA Collector-emitter saturation voltage VCE ( sat) I C = 500mA; IB = 50 mA 0.5 Base-Emitter Turn-On Voltage V BE( ON) I C=500mA; VCE =2V 1.0 I C = 150 mA; V CE = 2 V DC current gain hF E DCP55-16 Transition frequency fT 40 I C =500 mA; V CE = 2 V 25 I C = 500 mA; V CE = 2 V 100 I C = 50 mA; V CE = 5 V; f = 100 MHz V 250 250 200 MHz 1 http://www.twtysemi.com [email protected] 4008-318-123 1 of 3 Product specification DCP55-16-13 IC, COLLECTOR CURRENT (A) Typical Characteristics VCE(SAT), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE, COLLECTOR EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) http://www.twtysemi.com VBE(SAT), BASE EMITTER SATURATION VOLTAGE (V) VBE(ON), BASE EMITTER TURN-ON VOLTAGE (V) IC, COLLECTOR CURRENT (A) [email protected] IC, COLLECTOR CURRENT (A) 4008-318-123 2 of 3 Product specification DCP55-16-13 CAPACITANCE (pF) Typical Characteristics VCE = 5V f = 100MHz VR, REVERSE VOLTAGE (V) http://www.twtysemi.com [email protected] Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current 4008-318-123 3 of 3