Product specification PZT4403 SOT-223 ■ Features Unit: mm +0.2 3.50-0.2 +0.2 -0.2 ● Power dissipation：PC=1W ● Collector current (DC)：IC=600mA +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 6.50 +0.2 0.90-0.2 +0.1 3.00-0.1 +0.3 7.00-0.3 ● Complementary NPN Type Available (PZT4401) 4 1 Base 2 Collector 1 3 2 3 Emitter +0.1 0.70-0.1 2.9 4 Collector 4.6 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO -40 V Collector-emitter voltage VCEO -40 V Emitter-base voltage VEBO -5 V Collector current IC -600 mA Power dissipation PC 1 W TJ, Tstg -55 to150 ℃ Junction and Storage Temperature http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Product specification PZT4403 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC = 100μA, IE = 0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC = 1.0 mA, IB = 0 -40 V Emitter-base breakdown voltage V(BR)EBO IE =100μA, IC = 0 -5 V Collector cut-off current ICBO VCB=-35 V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-4V, IC=0 -0.1 μA hFE IC = -0.1 mA, VCE = -1.0 V IC = -1.0 mA, VCE = -1.0 V IC = -10 mA, VCE = -1.0 V IC = -150 mA, VCE = -2.0 V IC = -500 mA, VCE = -2.0 V DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * VCE(sat) VBE(sat) 30 60 100 100 20 300 IC = -150 mA, IB = -15 mA -0.4 IC = -500 mA, IB = -50 mA -0.75 IC = 150 mA, IB = 15 mA -0.95 IC = 500 mA, IB = 50 mA -1.3 IC = 20 mA, VCE = 10 V, f = 100 MHz 200 V V Transition frequency fT MHz Delay time td VCC = 30 V, VEB = 2.0 V, 15 ns Rise time tr IC = 150 mA, IB1 = 15 mA 20 ns Storage time ts VCC = 30 V, IC = 150 mA, 225 ns Fall time tf IB1 = IB2 = 15 mA 30 ns * Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. ■ Marking Marking 4403 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2