MOSFET IC IC MOSFET SMD Type Product specification KI9926A ■ Features SOP-8 ● RDS(on) = 0.030 Ω @ VGS = 4.5 V ● RDS(on) = 0.040 Ω @ VGS = 2.5 V. D1 D2 G1 G2 S1 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S2 Top View ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit Drain-Source Voltage Parameter VDS 20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current *1 TA=25℃ ID TA=70℃ Pulsed Drain Current Maximum Power Dissipation *1 IDM TA = 25℃ PD TA = 70℃ Thermal Resistance,Junction-to-Ambient RθJA 4.8 A 3.8 A 30 A 1.25 W 0.8 W 100 ℃/W Maximum Junction-to-Foot (Drain) RθJF 40 ℃/W Jumction temperature and Storage temperature Tj.Tstg -55 to +150 ℃ *1 Surface Mounted on 1” x 1” FR4 Board. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 MOSFET IC IC MOSFET SMD Type Product specification KI9926A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate Threshold Voltage Gate-Body Leakage Drain-Source On-State Resistance *2 gfs Qg Gate-Source Charge Qgs 0.6 ±100 0.023 0.030 VGS = 2.5V , ID = 5.4A 0.030 0.040 VDS = 15V , ID =6A 20 22 S nC 3 Qgd 3.3 Turn-On Delay Time td(on) 22 35 40 60 50 75 20 30 tr Turn-Off Delay Time td(off) Fall Time tf Continuous Source Current (Diode Conduction) IS Diode Forward Voltage *2 VSD VDD = 15 V, RL = 15 Ω ID ? 1 A, VGEN = 4.5V, RG = 6 Ω IS = 1.7A, VGS = 0 V Ω 20 Gate-Drain Charge Rise Time nA A 13 VDS = 15V , VGS = 4.5V , ID = 6A uA V VGS = 4.5V , ID = 6.5A VDS = 5V , VGS = 4.5V Unit V 25 VDS = 0V , VGS = ±12V Forward Transconductance *2 Max VDS = 20V , VGS = 0V , TJ =55℃ IGSS Total Gate Charge Typ 20 1 VDS = VGS , ID = 250uA ID(on) Min VDS = 20V , VGS = 0V VGS(th) rDS(on) On-State Drain Current *2 Test conditions VGS = 0 V, ID = 250 μA 0.7 ns 1 A 1.2 V *2 Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. http://www.twtysemi.com [email protected] 4008-318-123 2 of 2