TYSEMI KI9926A

MOSFET
IC
IC
MOSFET
SMD Type
Product specification
KI9926A
■ Features
SOP-8
● RDS(on) = 0.030 Ω @ VGS = 4.5 V
● RDS(on) = 0.040 Ω @ VGS = 2.5 V.
D1
D2
G1
G2
S1
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
S2
Top View
■ Absolute Maximum Ratings Ta = 25℃
Symbol
Rating
Unit
Drain-Source Voltage
Parameter
VDS
20
V
Gate-Source Voltage
VGS
±12
V
Continuous Drain Current *1
TA=25℃
ID
TA=70℃
Pulsed Drain Current
Maximum Power Dissipation *1
IDM
TA = 25℃
PD
TA = 70℃
Thermal Resistance,Junction-to-Ambient
RθJA
4.8
A
3.8
A
30
A
1.25
W
0.8
W
100
℃/W
Maximum Junction-to-Foot (Drain)
RθJF
40
℃/W
Jumction temperature and Storage temperature
Tj.Tstg
-55 to +150
℃
*1 Surface Mounted on 1” x 1” FR4 Board.
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
MOSFET
IC
IC
MOSFET
SMD Type
Product specification
KI9926A
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Drain-Source Breakdown Voltage
VDSS
Zero Gate Voltage Drain Current
IDSS
Gate Threshold Voltage
Gate-Body Leakage
Drain-Source On-State Resistance *2
gfs
Qg
Gate-Source Charge
Qgs
0.6
±100
0.023 0.030
VGS = 2.5V , ID = 5.4A
0.030 0.040
VDS = 15V , ID =6A
20
22
S
nC
3
Qgd
3.3
Turn-On Delay Time
td(on)
22
35
40
60
50
75
20
30
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Continuous Source Current (Diode Conduction)
IS
Diode Forward Voltage *2
VSD
VDD = 15 V, RL = 15 Ω
ID ? 1 A, VGEN = 4.5V, RG = 6 Ω
IS = 1.7A, VGS = 0 V
Ω
20
Gate-Drain Charge
Rise Time
nA
A
13
VDS = 15V , VGS = 4.5V , ID = 6A
uA
V
VGS = 4.5V , ID = 6.5A
VDS = 5V , VGS = 4.5V
Unit
V
25
VDS = 0V , VGS = ±12V
Forward Transconductance *2
Max
VDS = 20V , VGS = 0V , TJ =55℃
IGSS
Total Gate Charge
Typ
20
1
VDS = VGS , ID = 250uA
ID(on)
Min
VDS = 20V , VGS = 0V
VGS(th)
rDS(on)
On-State Drain Current *2
Test conditions
VGS = 0 V, ID = 250 μA
0.7
ns
1
A
1.2
V
*2 Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2