UMS CHA6517-99F

CHA6517
RoHS COMPLIANT
6-18GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA6517 is a Dual channel
monolithic three-stage GaAs high power
amplifier designed for wide band
applications.
This device is manufactured using a UMS
0.25 µm Power pHEMT process,
including, via holes through the substrate
and air bridges.
To simplify the assembly process:
• the backside of the chip is both RF
and DC grounded
• bond pads and back side are gold
plated for compatibility with eutectic
die attach method and thermosonic or
thermocompression bonding process.
Vg
Vd3
OUTPUT A
INPUT A
Vd1
Vd2
Vd3
OUTPUT B
INPUT B
Vg
Vd3
Main Features
0.25µm Power pHEMT Technology
6 – 18GHz Frequency Range
32dBm Output Power per channel
Compatible for balanced configuration
22dB nominal Gain
Quiescent Bias point : 600mA @ 8V
per channel
Chip size: 4.32 x 3.90 x 0.07mm
Output Power versus Frequency
Main Characteristics
Tamb=25°C (Tamb is the back-side of the chip)
Symbol
Parameter
Min
Typ
Max
Unit
18
GHz
F_op
Operating frequency range
6
Psat
Saturated output power
30
32
dBm
G_lin
Linear gain
19
22
dB
Ref. DSCHA65179250 - 07 Sept 09
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
6-18GHz High Power Amplifier
CHA6517
Electrical Characteristics (one channel)
Tamb=25°C (2), Vd=8V, Id (Quiescient)=0.6A, Pulsed biasing mode
Symbol
F_op
G_lin
RL_in
RL_out
Psat
PAE_sat
Vd
Id
Vg
Top
Parameter
Operating frequency
Linear gain (Pin=-5dBm)
Input Return Loss
Output Return Loss
Saturated output power (Pin=11dBm)
Power Added Efficiency in saturation
Positive supply voltage
Power supply quiescent current (1)
Negative supply voltage
Operating temperature range (2)
Min
6
19
30
Typ
22
-14
-8
32
15
8
0.6
-0.4
-40
Max
18
-8
-4
+70
Unit
GHz
dB
dB
dB
dBm
%
V
A
V
°C
(1) This parameter is fixed by gate voltage Vg
(2) The reference is the back-side of the chip
Absolute Maximum Ratings (1)
Symbol
Pin (2)
Vd (2)
Id (2)
Pd (2)
Tj
Tstg
(1)
(2)
Parameter
Maximum Input power
Positive supply voltage without RF power
Positive supply quiescent current
Power dissipation
Junction temperature
Storage temperature range
Values
19
8.5
1
13.5
175
-55 to +125
Unit
dBm
V
A
W
°C
°C
Operation of this device above anyone of these parameters may cause permanent damage.
These values are specified for Tamb=25°C
Ref. DSCHA65179250 - 07 Sept 09
2/10
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
6-18GHz High Power Amplifier
CHA6517
Typical measured characteristics
On Wafer Measurements, S parameters (one channel):
Tamb=25°C, Vd=8V, Id (Quiescient)=0.6A, pulsed mode :
Gain
dBS22
dBS11
Input and Output Return losses
Ref. DSCHA65179250 - 07 Sept 09
3/10
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
6-18GHz High Power Amplifier
CHA6517
On Wafer Measurements (one channel):
Tamb=25°C, Vd=8V, Id (Quiescient)=0.6A, Pin=11dBm, pulsed mode:
Output Power versus Frequency
18GHz
12GHz
6GHz
Id versus Pin
Ref. DSCHA65179250 - 07 Sept 09
4/10
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
6-18GHz High Power Amplifier
CHA6517
In test jig Measurements (one channel):
Vd=8V, Id (Quiescient)=0.6A, S parameters, CW mode:
Temp= -40°C
Temp= +25°C
Temp= +70°C
Gain versus Frequency and Temperature (-40°C, +25°C and +70°C)
dBS22
dBS11
Input and Output Return losses versus Frequency and Temperature
Ref. DSCHA65179250 - 07 Sept 09
5/10
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
6-18GHz High Power Amplifier
CHA6517
In test jig Measurements (one channel):
Vd=8V, Id (Quiescient)=0.6A, Power measurements, CW mode
Temp.=-40°C
Temp.=+25°C
Temp.=+70°C
Output power versus Frequency and Temperature (Pin=+12dBm)
Pin=-5dBm
Pin=+12dBm
Pin=+15dBm
Pin=+17dBm
Pin=+19dBm
Gain versus Frequency and Input power (Temp.=+25°C)
Ref. DSCHA65179250 - 07 Sept 09
6/10
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
6-18GHz High Power Amplifier
CHA6517
Temp.=-40°C
Temp.=+70°C
Temp.=+25°C
Output power versus Frequency and Temperature (Freq=18GHz)
Temp.=-40°C
Temp.=+25°C
Temp.=+70°C
Id current versus Frequency and Temperature (Pin=+17dBm)
Ref. DSCHA65179250 - 07 Sept 09
7/10
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
6-18GHz High Power Amplifier
CHA6517
3 745
6
2
3 470
3 270
4
5
7
3 145
2 945
1
11
2 075
2 075
121
1 820
825
10
9
8
2 150
13
14
15
1 750
16
955
755
22
20 19
1 840
1 990
18
120
130
000
000
17
4 200
21
1 290
630
430
4 190
985
120
3 900±35
3
4 200
3 770
4 195
1 840
1 990
1 290
120
Chip Mechanical Data and Pin references
4 320±35
Chip thickness = 70µm +/- 10µm
HF pads (1, 7, 16, 22) = 118 x 196
DC pads = 96 x 96
Pin number
1, 22
2, 3, 4, 19, 20, 21
5, 9, 14, 18
11, 12
10, 13
6, 8, 15, 17
7, 16
Ref. DSCHA65179250 - 07 Sept 09
Pin name
IN
VG
GND
VD1
VD2
VD3
OUT
8/10
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Description
Input RF port
Negative supply voltage
Ground (NC)
Positive supply voltage
Positive supply voltage
Positive supply voltage
Output RF port
Specifications subject to change without notice
6-18GHz High Power Amplifier
CHA6517
Assembly recommendations (one channel)
For thermal and electrical considerations, the chip should be brazed on a metal base plate.
The RF and DC connections should be done according to the following table:
Port
Connection
IN (1, 22)
OUT (7, 16)
VD (6, 8, 10, 11, 12, 13,
15, 17 )
Inductance (Lbonding)=0.3nH
Inductance (Lbonding)=0.3nH
Inductance ≤1nH
VG (2, 3, 4, 19, 20, 21)
Inductance ≤1nH
Ref. DSCHA65179250 - 07 Sept 09
9/10
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
External capacitor
C1 ~ 22pF
C3~ 1nF
C4~100nF
C2~ 120pF
Specifications subject to change without notice
6-18GHz High Power Amplifier
CHA6517
Recommended ESD management
Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD
sensitivity and handling recommendations for the UMS products.
Ordering Information
Chip form
:
CHA6517-99F/00
Elettronica S.p.A has the intellectual property of this MMIC and gives to United Monolithic Semiconductors
S.A.S. non-exclusive license to sell it.
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. DSCHA65179250 - 07 Sept 09
10/10
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice