CHA6105 RoHS COMPLIANT 8-12GHz Driver Amplifier GaAs Monolithic Microwave IC Description VD1 The CHA6105 is a monolithic three-stage medium power amplifier designed for X-band applications. The driver provides typically 31.5dBm output power at saturation and is suitable for systems requiring a high compression level. Moreover it includes a biasing control circuit that makes Pout less sensitive to spread and chip environment. VD2 VD3 ● ● OUT IN VD3 Control circuit V_C Main Features Frequency range: 8-12GHz 31.5dBm Saturated output power 30dB Linear Gain Quiescent bias point: 8V@700mA Chip size: 2.80 x 2.21 x 0.07mm 1100 Pout (dBm) @ 3dBc (dBm) 33 32 1050 1000 31 950 30 900 29 850 28 800 27 750 26 700 25 Id (mA) @ 3dBc (%) Linear Gain (dB) 24 550 22 500 7 7,5 8 8,5 9 9,5 10 10,5 11 11,5 12 12,5 Frequency (GHz) Pout & Id @ 3dB gain compression and Linear Gain (Pulse 25µs 10% Tamb. 20°C) Tamb = +20°C, Vc = +8V (Pulse 25µs 10%) Fop G Psat Idq Parameter Min Operating frequency range Typ 8 Small signal gain Max Unit 12 GHz 30 dB Saturated output power 31.5 dBm Power supply quiescent current 700 mA ESD Protections: Electrostatic discharge sensitive device observe handling precautions! Ref. : DSCHA61050106 - 16 Apr 10 600 23 Main Characteristics Symbol 650 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 13 Id (mA) @ 3dBc It is available in chip form. 34 Pout (dBm) @ 3dBc, Linear Gain (dB) The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. 8-12GHz Driver Amplifier CHA6105 Electrical Characteristics Vd = +8V, Pulse 25µs 10% Symbol Parameter Top Operating temperature range Fop Operating frequency range G Min Small signal gain at 25°C Max Unit -40 85 °C 8 12 GHz 34 dB 25.5 ∆G_T Linear gain variation vs temperature at 25°C P1dB Output power at 1dB gain compression at 25°C P3dB Output power at 3dB gain compression at 25°C Psat Typ 30 -0.03 5 dB/°C 30.5 dBm 31 dBm Output power at saturation 31.5 dBm dBS11 Input Return Loss 2:1 dB dBS22 Output Return Loss 2:1 dB 8 V mA 29.5 Vd Power supply voltage Idq Power supply quiescent current 700 Consumption under 3dB gain compression 925 Id_3dBc 1150 mA V_c Drain current control voltage -5 V I_c Biasing circuit consumption 25 mA Absolute Maximum Ratings (1) Tamb = 20°C Symbol Pin_max Cmp Vd Parameter Values Unit Maximum RF input power 13 dBm Compression level 13 dB Power supply voltage 9 V 850 mA -6 V <Id> maximum value of CW power supply current V_c Drain current control voltage Tj Maximum Junction temperature 175 °C Tstg Storage temperature range -55 to +125 °C (1) Operation of this device above anyone of these parameters may cause permanent damage Ref. : DSCHA61050106 - 16 Apr 10 2/8 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 8-12GHz Driver Amplifier CHA6105 Typical measurement characteristics Measurements Vd = 8V; Vctrl = -5V (Id Quiescent = 700mA). Pulsed = 25µs 10% 40 38 Linear Gain (dB) 36 34 32 30 28 85°C 25°C -20°C -40°C 26 24 22 20 18 7 7,5 8 8,5 9 9,5 10 10,5 11 11,5 12 12,5 13 12,5 13 Frequency (GHz) Linear gain vs frequency and temperature 34 33 32 Pout (dBm) 31 30 29 28 Temp 85°C Temp 25°C Temp -20°C Temp -40°C 27 26 25 24 7 7,5 8 8,5 9 9,5 10 10,5 11 11,5 12 Frequency (GHz) Output Power @ 3dB gain compression vs frequency and temperature Ref. DSCHA61050106 - 16 Apr 10 3/8 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 8-12GHz Driver Amplifier CHA6105 Ic-low Pin Temp 85°C 1100 Ic-low Pin Temp 25°C Ic-low Pin Temp -20°C 1050 Ic-low Pin Temp -40°C Ic-3dB Temp 85°C 1000 Ic-3dB Temp 25°C 950 Ic-3dB Temp -20°C Ic-3dB Temp -40°C Id (mA) 900 850 800 750 700 650 600 550 500 7 7,5 8 8,5 9 9,5 10 10,5 11 11,5 12 12,5 13 Frequency (GHz) Drain current @ low Pin and @ 3dB gain compression vs frequency and temperature Tamb = 25°C, Vd = 8V; Vctrl = -5V (Id Quiescent = 7 00mA). Pulsed = 25µs 10% 34 32 30 Pout (dBm) 28 26 24 8GHz 9GHz 10GHz 11GHz 12GHz 22 20 18 16 14 -15 -13 -11 -9 -7 -5 -3 -1 1 3 5 7 9 11 13 Pin (dBm) Output power vs Input power Ref. : DSCHA61050106 - 16 Apr 10 4/8 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice Pout (dBm) 8-12GHz Driver Amplifier CHA6105 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 8GHz 9GHz 10GHz 11GHz 12GHz -2 -1 0 1 2 3 4 5 6 7 8 9 10 11 12 13 7 9 11 13 Compression (dB) Output power vs Gain compression 1100 1050 1000 950 Id (mA) 900 8GHz 9GHz 10GHz 11GHz 12GHz 850 800 750 700 650 600 550 500 -15 -13 -11 -9 -7 -5 -3 -1 1 3 5 Pin (dBm) Drain current vs Input power Ref. DSCHA61050106 - 16 Apr 10 5/8 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 8-12GHz Driver Amplifier CHA6105 Chip Mechanical Data and Pin references 22 3 4 5 6 1 16 15 14 13 12 11 10 9 8 7 Chip thickness = 70µm +/- 10µm RF pads (1, 6) = 122 x 150µm² DC pads (2, 8, 9, 10, 11, 12, 13, 14, 15, 16) = 100 x 100µm² DC pads (3, 4, 5, 7) = 186 x 100µm² Pin number 1 11 14 2, 8, 12, 15 9, 10, 13, 16 3, 4, 5, 7 6 Pin name IN V_C GR GND VD OUT Ref. : DSCHA61050106 - 16 Apr 10 Description Input RF Control Voltage Not used Ground (NC) Not Used Drain supply voltage Output RF 6/8 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 8-12GHz Driver Amplifier CHA6105 Assembly recommendations in test fixture Ref. DSCHA61050106 - 16 Apr 10 7/8 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 8-12GHz Driver Amplifier CHA6105 Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS products. Ordering Information Chip form : CHA6105-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA61050106 - 16 Apr 10 8/8 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice