CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including via holes through the substrate and air bridges. A nitride layer protects the transistors and the passive components. Special heat removal techniques are implemented to guarantee high reliability. To simplify the assembly process: • the backside of the chip is both RF and DC grounded • bond pads and back side are gold plated for compatibility with eutectic die attach method and thermosonic or thermocompression bonding process. Main Features ■ Frequency band : 9.2-10.8 GHz ■ Pout @3dB Gain compression : 29.5 dBm ■ P.A.E @3dB Gain Compression : 40 % ■ Two biasing modes: • Digital control thanks to TTL interface • Analog control thanks to biasing circuit ■ Chip size: 2.87 x 1.47 x 0.1 mm3 Pout & PAE @ 3dB gain compression and Linear Gain (Temperature 25°C) Main Characteristics Tamb = +25°C, Vc = +7.5V (Pulse 100µs 20%) Symbol Fop G P3dB Icq Parameter Min Operating frequency range 9.2 Small signal gain 21 Typ 10.8 Unit GHz 23 29.5 Output power at 3dB compression Power supply quiescent current Max dB dBm 200 ESD Protections : Electrostatic discharge sensitive device observe handling precautions Ref. : DSCHA50120179 - 28 Jun 10 1/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 mA X Band Driver Amplifier CHA5012 Electrical Characteristics Vc= +7.5V (Pulse 100µs 20%) Symbol Parameter Fop Min Operating frequency range 9.2 G Small signal gain at 25°C 21 ∆G Small signal gain flatness at 25°C ∆G_T Linear gain variation vs temperature Pin Typ Unit 10.8 GHz 22.5 dB ±0.5 dB -0.025 dB/°C Input Power (1) 17 P1dB Output power at 1dB gain compression at 25°C P3dB Output power at 3dB gain compression at 25°C 27.5 29.5 Output power at 3dB gain compression at 80°C 27 29 PAE_3dBc Max 28 dBm dBm dBm PAE at 3dB gain compression at 25°C 40 PAE at 3dB gain compression at 80°C 37 dBS11 Input Return Loss -12 -10 dB dBS22 Output Return Loss -10 -7 dB Vc Power supply voltage 7.5 V Icq Power supply quiescent current (2) 200 mA Consumption under 3dB compression 290 mA Ic_3dBc % Vctrl Collector current control voltage 5 V Ictrl Biasing circuit consumption 5 mA I_TI TTL input consumption 1 mA TI_Low TTL input voltage low level 0 TI_High TTL input voltage high level (2) (1) (2) 2.5 0.4 5 mA Output Load 50Ω For Vc=7.5V, TTL interface settles Icq to 200 mA when TI=TI_High . If needed, Icq can be tuned thanks to Vctrl if the analog biasing circuit is used Absolute Maximum Ratings (3) Tamb = 25°C Symbol Top Vc Icq Ic_sat Vct Tj Tstg (3) (4) Parameter Values Unit Operating temperature range -40 to +80 °C Power supply voltage (4) Power supply quiescent current Power supply current in saturation Collector current control voltage Maximum Junction temperature Storage temperature range 10 320 350 6.5 175 -55 to +125 V mA mA V °C °C Operation of this device above anyone of these parameters may cause permanent damage. Without RF input power Ref. DSCHA50120179 - 28 Jun 10 2/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 V Specifications subject to change without notice X Band Driver Amplifier CHA5012 Typical measurement characteristics Measurement conditions : Vc=7.5V TTL interface used for biasing. TI_High=5V and TI_Low=0V (Ic Quiescient=200mA ) Pulse width=100µs, Duty cycle= 20% Linear gain versus frequency and temperature Output power @3dB gain compression versus frequency and temperature Ref. : DSCHA50120179 - 28 Jun 10 3/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice X Band Driver Amplifier CHA5012 Power added efficiency @3dB gain compression versus frequency and temperature Collector current @3dB gain compression versus frequency and temperature Ref. DSCHA50120179 - 28 Jun 10 4/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice X Band Driver Amplifier CHA5012 Output power versus gain compression and frequency (Temp.=25°C) 32 30 28 Pout (dBm) 26 24 9.2GHz 10GHz 10.8GHz 22 20 18 16 14 12 10 -1 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 Pin (dBm) Output power versus Pin and frequency (Temp.=25°C) Ref. : DSCHA50120179 - 28 Jun 10 5/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice X Band Driver Amplifier CHA5012 350 IC (mA) 300 250 25°C 80°C -40°C 200 150 100 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 6,5 7 Pin(dBm) Collector current versus input power and temperature @10GHz 350 300 250 Icq (mA) 25°C 80°C 200 80°C 150 -40°C 25°C 100 -40°C 50 0 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5 5,5 6 TI / Vctrl (V) Collector quiescent current versus TI, Vctrl and temperature Ref. DSCHA50120179 - 28 Jun 10 6/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice X Band Driver Amplifier CHA5012 10 9 8 7 Ictrl (mA) 80°C 6 5 25°C 4 3 -40°C 2 1 0 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5 5,5 6 6,5 7 Vctrl (V) Control current versus Vctrl and temperature Ref. : DSCHA50120179 - 28 Jun 10 7/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice X Band Driver Amplifier CHA5012 Chip Mechanical Data and Pin references Chip thickness = 100 +/- 10 µm RF pads (1, 12) = 118 x 68 µm² DC pads (2, 3, 4, 5, 9,6, 7, 8, 9, 10, 11) = 96 x 96 µm² Pin number 1 7, 9 5, 8 2 4 10 3, 6, 11 12 Pin name IN Ref. DSCHA50120179 - 28 Jun 10 Description Input RF port NC Collector current control voltage TTL input TTL output Ground (NC) Power supply voltage Output RF port Vctrl TI TO GND Vc OUT 8/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice X Band Driver Amplifier CHA5012 Bonding recommendations Port Connection IN (1) Inductance (Lbonding) = 0.3nH 400µm length with wire diameter of 25 µm Inductance (Lbonding) = 0.3nH 400µm length with wire diameter of 25 µm OUT (12) Assembly recommendations in test fixture using TTL interface Note: when the TTL interface is used for biasing, the pin TO (pin number 4) must be connected to the pins Vctrl ( pins number 5 and 8). Assembly recommendations in test fixture using analog biasing circuits Ref. : DSCHA50120179 - 28 Jun 10 9/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice X Band Driver Amplifier CHA5012 Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS products. Ordering Information Chip form : CHA5012-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. DSCHA50120179 - 28 Jun 10 10/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice