WEITRON TIP42B

TIP42/42A/42B/42C
PNP Silicon Epitaxial Power Transistor
P b Lead(Pb)-Free
COLLECTOR
2
Features:
* Medium Power Linear Switching Applications
* Complement to TIP41/41A/41B/41C
1
BASE
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
3
EMITTER
TO-220
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Parameter
Symbol
TIP42
TIP42A
TIP42B
TIP42C
Units
Collector-Base Voltage
VCBO
-40
-60
-80
-100
V
Collector-Emitter Voltage
VCEO
-40
-60
-80
-100
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current -Continuous
IC
-6
A
Collector Power Dissipation
PC
2
W
Junction Temperature
TJ
150
℃
Storage Temperature Range
Tstg
-55to+150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Symbol
TIP42B
V(BR)CBO
IC= -1mA, IE=0
TIP42
-40
V(BR)CEO*
IC= -30mA, IB=0
V(BR)EBO
TIP42
TIP42A
TIP42B
TIP42C
Collector cut-off current
V
-80
ICBO
ICEO
IE= -1mA, IC=0
-5
VCB=-40V, IE=0
VCB=-60V, IE=0
VCB=-80V, IE=0
VCB=-100V, IE=0
VCE= -30V, IB= 0
VCE= -60V, IB= 0
V
-0.4
mA
-0.7
mA
-1
mA
IEBO
VEB=-5V, IC=0
hFE(1)
VCE=-4V, IC=-0.3A
30
hFE(2)
VCE=-4 V, IC= -3A
15
VCE(sat)
IC=-6A, IB=-0.6A
-1.5
V
Base-emitter voltage
VBE
VCE=-4V, IC=-6A
-2
V
Transition frequency
fT
VCE=-10V,IC=-0.5
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
*
TIP42/42A
TIP42B/42C
-60
-100
TIP42C
Emitter-base breakdown voltage
UNIT
V
-80
-100
TIP42A
MAX
-60
TIP42C
TIP42B
Collector cut-off current
MI N
-40
TIP42
TIP42A
Collector-emitter breakdown voltage
Test conditions
3
75
MHZ
Pulse test
WEITRON
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17-Nov-08
TIP42/42A/42B/42C
Typical Characteristics
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17-Nov-08
TIP42/42A/42B/42C
TO-220 Outline Dimensions
D
C1
Ø
F
unit:mm
A
Dim
A
A1
B
B1
C
C1
D
E
E1
G
G1
F
H
L
L1
H
E1
E
L
B1
L1
A1
B
G
C
G1
Ø
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TO-220
Min
Max
4.67
4.47
2.82
2.52
0.91
0.71
1.37
1.17
0.53
0.31
1.37
1.17
10.31
10.01
8.90
8.50
12.06
12.446
2.54 TYP
4.98
5.18
2.89
2.59
0.30
0.00
13.4
13.8
3.96
3.56
3.93
3.73
17-Nov-08