MMBT4403WT1

WILLAS
FM120-M
THRU
MMBT4403WT1
General
Purpose
Transistors
FM1200-M
1.0A
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
process design, excellent power dissipation offers
•
PNPBatch
Silicon
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimizethat
board
the space.
material of product compliance with RoHS requirements.
• We declare
• Low power loss, high efficiency.
package is available
• Pb-Free
• High current capability, low forward voltage drop.
0.146(3.7)
0.130(3.3)
RoHS
for packing code suffix ”G”
surge capability.
• Highproduct
overvoltage
protection.
• Guardring
Halogen
free for
product
for packing
code suffix “H”
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.012(0.3) Typ.
3
0.071(1.8)
0.056(1.4)
1
2
MIL-STD-19500 /228
ORDERING INFORMATION
• RoHS product for packing code suffix "G"
Halogen free product
suffix "H"
Device
Markingfor packing code
Shipping
SOT-323
Mechanical data
MMBT4403WT1
2T
3000/Tape & Reel
• Epoxy : UL94-V0 rated flame retardant
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
,
•
Terminals
:Plated terminals, solderable per MIL-STD-750
MAXIMUM
RATINGS
Rating Method 2026
• Polarity : Indicated
Collector–Emitter
Voltage by cathode band
Collector–Base
Position : Any
• MountingVoltage
Emitter–Base Voltage
• Weight : Approximated 0.011 gram
Collector Current — Continuous
0.031(0.8) Typ.
Symbol
Value
Unit
V CEO
V CBO
V EBO
– 40
– 40
– 5.0
Vdc
Vdc
Vdc
IC
– 600
mAdc
0.031(0.8) Typ.
3
COLLECTOR
Dimensions in inches and (millimeters)
1
BASE
2
EMITTER
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃
ambient temperature unless otherwise specified.
THERMAL
CHARACTERISTICS
Single phase half wave, 60Hz, resistive of inductive load.
Characteristic
Symbol
Max
Unit
For capacitive load, derate current by 20%
Total Device Dissipation FR−5 Board
PD
150
mW
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
RATINGS
TA = 25°C
Marking Code
12
13
14
15
16
18
10
115
120
Thermal Resistance,
RJA
833
°C/W
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
V
RRM
Junction−to−Ambient
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
Junction and Storage Temperature
TJ, Tstg
−55 to +150
°C
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
Maximum Average Forward Rectified Current
DEVICE
MARKING
Peak Forward
Surge Current 8.3 ms single half sine-wave
MMBT4403WT1
2T (JEDEC method)
superimposed
on rated=load
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance
(Note 1)
ELECTRICAL
CHARACTERISTICS
(T A
RΘJA
Storage
Temperature Range
OFF
CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3)
CHARACTERISTICS
(I C = –1.0 mAdc, I B = 0)
TJ
TSTG
VF
Collector–Base Breakdown Voltage
(I C = –0.1mAdc, I E = 0)
IR
Rated DC Blocking Voltage
Emitter–Base Breakdown Voltage@T A=125℃
(I E = –0.1mAdc, I C = 0)
NOTES:
Base Cutoff
Current
1- Measured
at 1 MHZ
and applied reverse voltage of 4.0 VDC.
(V
CE = –35 Vdc, V EB = –0.4 Vdc)
2- Thermal Resistance From Junction to Ambient
Collector Cutoff Current
(V CE = –35 Vdc, V EB = –0.4 Vdc)
Maximum Average Reverse Current at @T A=25℃
-55
to +125
Symbol
40
120
Min
Max
Unit
- 65 to +175
V (BR)CEO
-55 to +150
Vdc
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Maximum Forward Voltage at 1.0A DC
1.0
30
CJ otherwise noted) = 25°C unless
Operating Temperature Range
Characteristic
IO
IFSM
0.50
V (BR)CBO
– 40
0.70
—
– 40
—
– 5.0
—
—
– 0.1
—
– 0.1
V (BR)EBO
0.5
10
Vdc
0.85
0.9
0.92
Vdc
µAdc
I BEV
µAdc
I CEX
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%.
2012-0
2012-06
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M
MMBT4403WT1THRU
General
Purpose
Transistors
FM1200-M
1.0A
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Package
outline
Min
Max
Characteristic
Symbol
• Batch process design, excellent power dissipation offers
ON CHARACTERISTICS
better reverse leakage current and thermal resistance.
DC Current Gain
hFE
• Low profile surface mounted application in order to
(I
=
–0.1
mAdc,
V
=
–1.0
Vdc)
C
CE
optimize
board space.
–1.0 mAdc,
–1.0 Vdc)
C = power
CE = efficiency.
loss,Vhigh
• (ILow
mAdc,
V CE = –1.0
Vdc)
current
capability,
low
forward voltage drop.
• (IHigh
C = –10
surge
capability.
• (IHigh
=
–150
mAdc,
V
=
–2.0
Vdc)(3)
C
CE
for overvoltage
• (IGuardring
V CE = –2.0 protection.
Vdc)(3)
C = –500 mAdc,
Ultra high-speedSaturation
switching.
• Collector–Emitter
Voltage(3)
VCE(sat)
epitaxial planar chip, metal silicon junction.
• (ISilicon
C = –150mAdc, I B = –15 mAdc)
parts meet environmental standards of
• (ILead-free
C = –500 mAdc, I B = –50 mAdc)
MIL-STD-19500 /228
Base–Emitter
(3) "G"
V BE(sat)
productSaturation
for packingVoltage
code suffix
• RoHS
(I
=
–150
mAdc,
I
=
–15
mAdc)
C
B for packing code suffix "H"
Halogen
free product
(I C = –500 mAdc, I Bdata
= –50 mAdc)
Mechanical
Features
SOD-123H
30
60
100
100
20
VRMS
Maximum
DCTime
Blocking Voltage
VDC
Delay
(V CC = – 30 Vdc, V EB = –2.0
Vdc,
Maximum
Current I B1 = –15 mAdc)
IO
RiseAverage
Time Forward Rectified
I C = –150mAdc,
StorageSurge
TimeCurrent 8.3(VmsCCsingle
= –30half
Vdc,
I C = –150 mAdc,
Peak Forward
sine-wave
IFSM
superimposed
on rated load (JEDEC
I B2 = –15 mAdc)
Fall Time
I B1 = method)
Typical Thermal Resistance (Note 2)
RΘJA
3. Pulse
Test: Pulse
Width <300
µs; Duty Cycle <2.0%.
Typical
Junction
Capacitance
(Note 1)
CJ
TJ
Operating Temperature Range
Storage Temperature Range
0.071(1.8)
––
––
– 0.4
– 0.75
– 0.75
––
– 0.95
– 1.3
Vdc
0.040(1.0)
0.024(0.6)
MHz
0.031(0.8) Typ.
0.031(0.8) Typ.
Maximum Forward Voltage at 1.0A DC
28
35
30
40
— 50
td
td
—
ts
—
tf
70
105
140
80
100
150
200
1.0
20
225
30
30
40
120
-55 to +125
ns
ns
-55 to +150
- 65 to +175
1.0 k
0.50
IR
+ 14V
NOTES:
0
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
C S* < 10 pF
0
2- Thermal Resistance From Junction to Ambient
–16 V
1.0 to 100µs,
–16 V
DUTY CYCLE = 2%
Figure 1. Turn–On Time
2012-06
56
—
VF
200
@T A=125℃
Rated DC Blocking Voltage
2012-0
42
60 15
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
– 30 V
Maximum Average Reverse Current at @T A=25℃
<2.0 ns
21
20
SWITCHING TIME EQUIVALENT TEST CIRCUITS
CHARACTERISTICS
+2.0V
14
TSTG
0.012(0.3) Typ.
200
––
Method
2026
Collector–Base
Capacitance
C cb
pF
Dimensions in
inches and (millimeters)
• (V
Polarity
: Indicated by cathode band
––
8.5
CB= –10 Vdc, I E = 0, f = 1.0 MHz)
Capacitance
C eb
pF
Mounting Position
: Any
• Emitter–Base
(V
––
30
BE = –0.5 Vdc, I C = 0, f = 1.0 MHz)
• Weight : Approximated 0.011 gram
Input Impedance
h ie
kΩ
(V CE= –10
Vdc, I C = –1.0
mAdc, f =AND
1.0 kHz)
1.5
15
MAXIMUM
RATINGS
ELECTRICAL CHARACTERISTICS
–4
Voltage
Ratio
X 10
Ratings at
25℃ Feedback
ambient temperature
unless otherwise specified. h re
(V CE=
–10
Vdc, 60Hz,
I C = –1.0
mAdc,
= 1.0 kHz)
0.1
8.0
Single phase
half
wave,
resistive
of finductive
load.
Small–Signal
Current
Gain
h
—
fe
For capacitive load, derate current by 20%
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
60
500
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
RATINGS
Output Admittance
h oe
µmhos
Marking Code
12
13
14
15
16
18
10
115
120
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
1.0
100
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum
RMS Voltage
SWITCHING
CHARACTERISTICS
––
––
––0.146(3.7)
0.130(3.3)
––
300
––
Vdc
0.056(1.4)
• Epoxy : UL94-V0 rated flame retardant
SMALL–SIGNAL CHARACTERISTICS
• Case : Molded plastic, SOD-123H
Current–Gain — Bandwidth Product
fT,
• (ITerminals
:Plated terminals, solderable per MIL-STD-750
C = –20mAdc, V CE= –10 Vdc, f = 100 MHz)
Unit
0.70
< 20 ns
1.0 k
– 30 V
0.5
10
0.85
0.9
0.92
200
C S*< 10 pF
1N916
1.0 to 100µs,
DUTY CYCLE = 2%
+4.0 V
Scope rise time < 4.0ns
*Total shunt capacitance of test jig connectors, and oscilloscope
Figure 2. Turn–Off Time
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M
MMBT4403WT1THRU
FM1200-M
1.0A
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
General
Purpose
Transistors
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
TYPICAL TRANSIENT CHARACTERISTICS
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
optimize board space.
30 • Low power loss, high efficiency.
• High current capability, low forward voltage drop.
20 • High surge capability.
C eb
• Guardring for overvoltage protection.
• Ultra high-speed switching.
10 • Silicon epitaxial planar chip, metal silicon junction.
7.0 • Lead-free parts meet environmental standards of
MIL-STD-19500 /228
C cb
5.0 • RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
3.0
7.0
• Epoxy : UL94-V0 rated flame retardant
2.0 • Case : Molded plastic, SOD-123H
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30
,
• Terminals :Plated terminals, solderable per MIL-STD-750
3.0
0.071(1.8)
0.056(1.4)
2.0
1.0
0.7
0.5
QT
0.3
QA
0.2
0.1
0.031(0.8) Typ.
10
20
30
300
500
V CC= 30V
I C / I B =10
70
t r, RISE TIME (ns)
20
0.031(0.8) Typ.
200
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unlesst otherwise
@V CC=30Vspecified.
r
@V CC=10V
t
Single
phase
half
wave,
60Hz,
resistive
of
inductive
load.
30
r
For capacitive load, derate current by 20% t d@VBE(off) = 2.0V
t , TIME (ns)
100
100
I C /I B = 10
70
50
70
Figure
4. Charge
Data
Dimensions
in inches and
(millimeters)
Figureby3.cathode
Capacitance
• Polarity : Indicated
band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
50
0.040(1.0)
0.024(0.6)
I C , COLLECTOR CURRENT (mA)
REVERSE
VOLTAGE (VOLTS)
Method 2026
100
0.012(0.3) Typ.
V CC = 30 V
I C / I B = 10
5.0
Mechanical data
T J = 25°C
T J = 100°C
0.146(3.7)
0.130(3.3)
10
Q, CHARGE (nC)
CAPACITANCE (pF)
• Low profile surface mounted application in order to
50
30
t d@VBE(off) = 0V
20
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
RATINGS
Marking Code
Maximum
Recurrent Peak Reverse Voltage
10
VRRM
12
20
7.0
Maximum
RMS Voltage
VRMS
Maximum DC Blocking Voltage
VDC
5.0
Maximum
Rectified
10 Average
20 Forward
30
50
70Current
100
200
IO
300
13
3010
14
40
15
50
16
60
18
80
10
100
115
150
120
200
14
21
7.0
28
35
42
56
70
105
140
20
30
60
80
150
200
40
5.0
500
10
50
20
superimposed on rated load
(JEDEC5.method)
Figure
Turn–On
Typical Thermal Resistance (Note 2)
Time
CJ
Operating Temperature Range
TJ
200
Storage Temperature Range
200
300
500
Figure 6. Rise Time
RΘJA
Typical Junction Capacitance (Note 1)
100
1.0 100
70
50
I C , COLLECTOR
30CURRENT (mA)
IFSM
Peak Forward Surge Current
8.3 ms single half
sine-wave(mA)
I , COLLECTOR
CURRENT
C
30
40
120
-55 to +125
I C/I B = 20
TSTG
-55 to +150
- 65 to +175
t s , RISE TIME (ns)
100
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
70
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
NOTES:
I C/I B = 10
VF
Maximum Forward Voltage at 1.0A DC
0.50
0.70
IR
50@T A=125℃
0.85
0.9
0.5
0.92
10
t s’ = t s – 1/8 t f
I B1 = I B2
1- Measured at 1 MHZ and applied reverse30voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
20
10
20
30
50
70
100
200
300
500
I C , COLLECTOR CURRENT (mA)
Figure 7. Storage Time
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M
MMBT4403WT1THRU
General
Purpose
Transistors
FM1200-M
1.0A
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
Package
Features
V CE = –10 Vdc, T A = 25°C
• Batch process design, excellent power dissipation offers
Bandwidth = 1.0 Hz
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
10
6
4
MIL-STD-19500 /228
code
suffix "G"
• RoHS product forRpacking
= OPTIMUM
SOURCE
RESISTANCE
S
2
Halogen free product for packing code suffix "H"
Mechanical data
0
f = 1.0 kHz
0.146(3.7)
0.130(3.3)
8
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
8
SOD-123H
10
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
= 1.0 mA, R S = 430Ω
C
protection.
• Guardring forI overvoltage
I C = 500 µA, R S = 560Ω
• Ultra high-speed switching.
I C = 50 µA, R S = 2.7kΩ
planar chip, metal silicon junction.
• Silicon epitaxial
I C = 100 µA, R S = 1.6 kΩ
meet environmental standards of
• Lead-free parts
outline
6
0.012(0.3) Typ.
I C = 50 µA
100 µA
500 µA
1.0 mA
4
0.071(1.8)
0.056(1.4)
2
0
0.010.02
0.1 0.2
Epoxy0.05
: UL94-V0
0.5 1.0flame
2.0 retardant
5.0 10 20
50 100
rated
•
f , FREQUENCY (kHz)
• Case : Molded plastic, SOD-123H
,
Figure 8. Frequency Effects
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
50 100
200
500
1k
2k
5k
10k
20k
0.040(1.0)
50k
0.024(0.6)
R , SOURCE RESISTANCE (Ω)
S
0.031(0.8) Typ.
Figure 9. Source Resistance Effects
0.031(0.8) Typ.
h PARAMETERS
Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band (V CE = –10 Vdc, f = 1.0 kHz, T A = 25°C)
Position : Any
• Mounting
This group of graphs illustrates the relationship between h fe and other “h” parameters for this series of ransistors. To obtain these curves,
• Weight
: Approximated
gram
a high–gain
and a low–gain 0.011
unit were
selected from the MMBT4403WT1 lines, and the same units were used to develop the correspondingly
numbered curves on each graph.
h fe, CURRENT GAIN
Ratings at 25℃ ambient temperature unless otherwise specified.
700
Single phase half wave, 60Hz, resistive of inductive load.
500
For capacitive load, derate current by 20%
300
RATINGS
h ie, INPUT IMPEDANCE (kΩ)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
100
1000
VRRM
Maximum Recurrent Peak Reverse Voltage
MMBT4403WT1 UNIT 1
VRMS
MMBT4403WT1 UNIT 2
Maximum
100 RMS Voltage
Maximum
70 DC Blocking Voltage
VDC
IO
IFSM
50 Average Forward Rectified Current
Maximum
Peak Forward
Surge Current 8.3 ms single half sine-wave
30
0.1 on rated
0.2 load
0.3(JEDEC
0.5 0.7
1.0
superimposed
method)
2.0
3.0
7.0 5.0
12
20
14
20
10
CHARACTERISTICS
5.0
Maximum
Forward Voltage at 1.0A DC
MMBT4403WT1 UNIT 1
VF
IR
@T A=125℃
1.0
NOTES:
0.5
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal
Resistance From Junction to Ambient
0.2
0.1
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
7.0 5.0
I C , COLLECTOR CURRENT (mAdc)
Figure 12. Voltage Feedback Ratio
2012-0
2012-06
18
80
10
100
115
150
120
200
28
35
42
56
70
105
140
40
50
60
80
100
150
200
0.2
0.1
0.2
0.3
0.5 0.7
1.0
30
1.0
2.0
3.0
7.0 5.0
10
I C , COLLECTOR CURRENT (mAdc)
40
Figure 11. Input120
Impedance
-55 to +150
500
- 65 to +175
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
MMBT4403WT1
UNIT 2 FM120-MH FM130-MH
SYMBOL
100
Maximum
2.0 Average Reverse Current at @T A=25℃
16
60
30
0.5
TSTG
15
50
21 1
-55 to +125
TJ
20
Storage Temperature Range
14
40
CJ
Operating Temperature Range
5
13
30 2
10
h oe , OUTPUT ADMITTANCE ( µmhos)
h re, VOLTAGE FEEDBACK RATIO (X 10 –4 )
Figure(Note
10. 1)
Current Gain
Typical Junction Capacitance
Rated DC Blocking Voltage
10
0.1
I C , COLLECTOR
Typical Thermal Resistance
(Note 2) CURRENT (mAdc)RΘJA
MMBT4403WT1 UNIT 2
20
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking200
Code
MMBT4403WT1 UNIT 1
50
10
50
0.50
0.70
0.9
0.85
0.5
10
20
10
0.92
MMBT4403WT1 UNIT 1
MMBT4403WT1 UNIT 2
5.0
2.0
1.0
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
7.0 5.0
10
I C , COLLECTOR CURRENT (mAdc)
Figure 13. Output Admittance
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M
THRU
MMBT4403WT1
FM1200-M
General
Purpose
Transistors
1.0A
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
dissipation offers
• Batch process design, excellent powerSTATIC
CHARACTERISTICS
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
h FE , NORMALIZED CURRENT GAIN
3.0
optimize board space.
• Low power loss, high efficiency.
V = 1.0 V
capability, low forward voltage drop.
• High current CE
2.0
= 10 V
CE
• High surgeVcapability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
1.0
• Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
•
0.7
V CE, COLLECTOR EMITTER VOLTAGE (VOLTS)
25°C
0.071(1.8)
0.056(1.4)
–55°C
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
: Molded
plastic,
• Case
0.1
0.2
0.3
0.5 SOD-123H
0.7
1.0
2.0
3.0
5.0 7.0
10
200.031(0.8)
30 Typ.
,
• Terminals :Plated terminals, solderable perI MIL-STD-750
, COLLECTOR CURRENT (mA)
0.040(1.0)
0.024(0.6)
0.2
0.8
50
70
Dimensions in inches and (millimeters)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single 0.6
phase halfI wave,
60Hz, resistive of inductive load.
=1.0 mA
10 mA
C
For capacitive load, derate current by 20%
RATINGS
0.4
100mA
500mA
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Maximum
0.2 Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
Maximum RMS Voltage
VRMS
14
21
28
Maximum0 DC Blocking Voltage
VDC
20
30
40
IO0.2
0.05
0.07 0.1
Current
0.3
0.5
14
40
0.7
1.0
15
50
2.0
16
60
18
80
35
42
50
60
3.0
RΘJA
Typical10Junction
CJ
+ 0.5
Operating Temperature Range
TJ
Capacitance (Note 1)
T J = 25°C
CHARACTERISTICS
0.6
Maximum Average Reverse Current at @T A=25℃
IR
@T A=125℃
NOTES:
0.2
1- Measured at 1 MHZ and applied
reverse
V
@ I /I voltage
=10 of 4.0 VDC.
CE(sat)
C
0.2
0.5
1.0 2.0
5.0
10
20
140
150
200
20
30
50
-55 to +150
- 65
+175
θ VC
fortoVCE(sat)
– 0.5
–1.0
0.50
0.70
0.9
0.85
0.5
0.92
10
–1.5
θ VS for V BE
–2.0
– 2.5
50
100 200
I C , COLLECTOR CURRENT (mA)
Figure 16. “On” Voltages
2012-06
105
100
B
2- Thermal
0 Resistance From Junction to Ambient
0.1
70
80
40
120
0
VF
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
56
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
V BE @ V CE =1.0 V
0.4
120
200
30
-55 to +125
TSTG
115
150
COEFFICIENT (mV/ °C)
V, VOLTAGE ( VOLTS )
V BE(sat) @ I C /I B =10
0.8 Temperature Range
Storage
10
100
7.0
1.0 10
5.0
I , BASE CURRENT (mA)
B
IFSM
Figure
15. Collector Saturation Region
Typical Thermal Resistance (Note 2)
2012-0
300 0.031(0.8)
500 Typ.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
superimposed on rated load (JEDEC method)
20
C
Peak Forward Surge Current 8.3 ms single half sine-wave
100
Figure 14. DC Current Gain
• Polarity : Indicated by cathode band
• Mounting Position : Any
1.0
• Weight : Approximated 0.011 gram
0.01Forward
0.02
0.03
Maximum 0.005
Average
Rectified
0.012(0.3) Typ.
0.3
Marking Code
T J = 125°C
MIL-STD-19500 /228
0.5
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Method 2026
0.146(3.7)
0.130(3.3)
500
0.1
0.2
0.5
1.0 2.0
5.0
10
20
50
100 200
500
I C , COLLECTOR CURRENT (mA)
Figure 17. Temperature Coefficients
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M
MMBT4403WT1THRU
FM1200-M
General
Purpose
Transistors
1.0A
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
SOT−323
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
.054(1.35)
.045(1.15)
MIL-STD-19500 /228
0.146(3.7)
0.130(3.3)
.004(0.10)MIN.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
.087(2.20)
• Ultra high-speed switching.
.070(1.80)
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
Method 2026
.096(2.45)
.078(2.00)
• RoHS product for packing code suffix "G"
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
.010(0.25)
Dimensions in inches and (millimeters)
.003(0.08)
• Polarity : Indicated by
cathode band
.056(1.40)
• Mounting Position : Any
.047(1.20)
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
.004(0.10)MAX.
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
Maximum RMS Voltage
VRMS
14
.016(0.40)VDC
Maximum Average Forward Rectified Current.008(0.20)IO
Maximum DC Blocking Voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
IFSM
20
13
30
14
40
.043(1.10)
.032(0.80)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
15
50
16
60
18
80
TJ
Storage Temperature Range
120
200
28
35
42
56
70
105
140
30
40
50
60
80
100
150
200
1.0
30
Operating Temperature Range
115
150
21
40
120
DimensionsRinΘJAinches and (millimeters)
CJ
10
100
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.5
0.92
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-0
2012-06
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.