WILLAS SEDFN05V4

WILLAS
FM120-M+
SEDFN05V4THRU
FM1200-M+
Ultra Low Capacitance TVS Arrays
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers Applications
Features
better reverse leakage current and thermal resistance.
z
z
z
z
z
z
z
z
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
Package
design optimized for high speed lines
• Low power loss, high efficiency.
Flow-Through
design low forward voltage drop.
• High current capability,
capability.
• High surge
Protects
four
I/O lines
• Guardring for overvoltage protection.
Low
0.3pF typical (I/O to I/O)
high-speed switching.
• Ultracapacitance:
epitaxial
planar chip, metal silicon junction.
• Silicon
Low
clamping
voltage
Lead-free parts meet environmental standards of
•Low
operating voltage: 5V
MIL-STD-19500 /228
for packing code suffix
"G"
• RoHS product
Solid-state
silicon-avalanche
technology
Halogen free product for packing code suffix "H"
z
High Definition Multi-Media
Interface (HDMI).
0.146(3.7)
z
Digital Visual Interface 0.130(3.3)
(DVI)
z
DisplayPortTM Interface
z
MDDI Ports
z
LVDS
z
Serial ATA
z
PCI Express
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Pb-Free package is available
Mechanical data
0.040(1.0)
RoHS product for packing code suffix ”G”
Complies with the following standards
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
Halogen free product for packing code suffix “H”
IEC61000-4-2
• Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
0.031(0.8) Typ.
,
• Terminals :Plated terminals, solderable per MIL-STD-750 Level 4 15 kV (air discharge)
Method 2026
General Description
8 kV(contact discharge)
Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band
MIL STD 883E - Method 3015-7 Class 3
• Mounting Position : Any
SEDFN05V4 are ultra low capacitance TVS arrays
25 kV HBM (Human Body Model)
• Weight : Approximated 0.011 gram
designed to protect high speed data interfaces.This
RATINGSdesigned
AND ELECTRICAL
series has MAXIMUM
been specifically
to protect CHARACTERISTICS
Ratings
at 25℃components
ambient temperature
unless
otherwise
specified. to
sensitive
which
are
connected
Single phase half wave, 60Hz, resistive of inductive load.
high-speed data and transmission lines form
For capacitive load, derate current by 20%
overvoltage
caused
RATINGS
discharge),CDE(Cable
Marking
Code
by
ESD(electrostatic
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Discharge
Events),and
12
Maximum
Recurrent fast
Peak transients)
Reverse Voltage
EFT(electrical
VRRM
20
13
30
Maximum RMS Voltage
VRMS
14
21
28
Maximum DC Blocking Voltage
VDC
20
30
40
Maximum
Average Forward
Rectified Current
Functional
diagram
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
15
50
16
60
18
80
10
100
115
150
120
200
35
42
50
60
56
70
105
140
80
100
150
200
1.0
30
RΘJA
Typical Thermal Resistance (Note 2)
14
40
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Absolute
Maximum
AverageMaximum
Reverse CurrentRatings
at @T A=25℃
0.50
IR
0.9
0.85
0.5
@T A=125℃
Parameter
10
Value
Units
NOTES:
Peak Pulse Power (tp = 8/20μs)
150
Watts
P pk
I PP
Peak Pulse Current (tp = 8/20μs)
5
A
V ESD
ESD per IEC 61000-4-2 (Air)
+/- 17
kV
ESD per IEC 61000-4-2 (Contact)
+/- 12
TJ
Operating Temperature
-55 to +125
°C
T STG
Storage Temperature
-55 to +150
°C
2- Thermal Resistance From Junction to Ambient
2012-09
2012-06
0.92
Rated DC
Blocking Voltage
Symbol
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.70
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
SEDFN05V4THRU
Ultra Low Capacitance TVS Arrays
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Electrical
Parameter
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
Symbol
Parameter
application in order to
• Low profile surface mounted
optimize
board space. Reverse
Maximum
Peak Pulse
I•PPLow power loss, high efficiency.
Current
• High current capability, low forward voltage drop.
VC
Clamping Voltage @ IPP
• High surge capability.
Guardring
for overvoltage
protection.
V•RWM
Working
Peak Reverse
Voltage
switching.
• Ultra high-speed
Maximum Reverse Leakage Current
•IRSilicon epitaxial planar chip, metal silicon junction.
@ VRWM
meet environmental standards of
• Lead-free parts
ITMIL-STD-19500
Test Current
/228
• RoHS product for packing code suffix "G"
VBR
Breakdown Voltage @ I
Halogen free product for packing codeTsuffix "H"
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
plastic, SOD-123H
• Case : Molded
Electrical
Characteristics
(Tamb=25℃)
,
• Terminals :Plated terminals, solderable
per MIL-STD-750
VBR
Method 2026
0.031(0.8) Typ.
Vc
VRWM
0.031(0.8) Typ.
C
IRWM.
• Polarity : Indicated by cathode Min.
band
• Mounting Position : Any
V
V
V
μA
• Weight : Approximated 0.011 gram
SEDFN05V4
6
15
5
1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Dimensions in inches
Typ and
0v (millimeters)
bias
pF
0.30
Typical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
Maximum RMS Voltage
14
40
15
50
16
60
18
80
10
100
115
150
120
200
VRMS
14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
1.0
30
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
0.9
0.92
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-09
2012-06
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
Ultra Low Capacitance TVS Arrays
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
SEDFN05V4THRU
FM1200-M+
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
V
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
V
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
1.0
30
40
120
-55 to +125
℃
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
0.9
0.92
10
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-09
2012-06
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
SEDFN05V4
THRU
Ultra Low Capacitance TVS Arrays
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
DFN-10
Mechanical
Data
better
reverse leakage
current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
.100(2.55)
• Low power loss, high efficiency.
.096(2.45)
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
.041(1.05)
.037(0.95)
0.012(0.3) Typ.
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
0.071(1.8)
0.056(1.4)
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
.002(0.05 )
.000(0.00 )
.026(0.65 )
.022(0.55 )
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
.0006(0.152) REF.
.006(1.50)
Ratings at 25℃ ambient temperature unless otherwise
specified.
Single phase half wave, 60Hz, resistive of inductive load.
.018(0.45)
For capacitive load, derate current by 20%
.014(0.35)
RATINGS
.035(0.90)
.043(1.10)
MAXIMUM RATINGS AND
ELECTRICAL CHARACTERISTICS
.020(0.50)TYP.
.100(2.50)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
Maximum RMS Voltage
VRMS
14
21
28
35
Maximum DC Blocking Voltage
VDC
20
30
40
50
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Storage Temperature Range
115
150
120
200
V
42
56
70
105
140
V
60
80
100
150
200
V
40
120
-55 to +125
TJ
Operating Temperature Range
10
100
1.0
30
(millimeters)
Dimensions
CJ in inches and
Typical Junction Capacitance (Note 1)
18
80
.018(0.45)
.014(0.35)
RΘJA
Typical Thermal Resistance (Note 2)
16
60
A
A
℃
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
Marking
Maximum
Average Reverse Current at
@T A=25℃
Rated DC Blocking Voltage
@T A=125℃
NOTES:
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
Maximum Forward Voltage at 1.0A DC
Type number
SEDFN05V4
2012-09
2012-06
0.70
0.85
0.5
IR
0.9
0.92
V
10
m
Marking code
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.50
05V4
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.