RoHS 2SD1898 2SD1898 SOT-89 TRANSISTOR (NPN) 1. BASE FEATURES z High VCEO z High IC z Good hFE linearity z Low VCE (sat) 2. COLLECTOR 1 3. EMITTER 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=50μA, IE=0 100 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 80 V Emitter-base breakdown voltage V(BR)EBO IE=50μA, IC=0 5 V Collector cut-off current ICBO VCB=80V, IE=0 1 μA Emitter cut-off current IEBO VEB=4V, IC=0 1 μA DC current gain hFE VCE=3V, IC=0.5A VCE(sat) Collector-emitter saturation voltage fT Transition frequency Cob Output capacitance CLASSIFICATION OF 82 390 IC=500mA, IB=20mA 0.4 VCE=10V, IC=50mA, f=100MHz 100 MHz VCB=10V,IE=0,f=1MHz 20 pF hFE Rank P Q R Range 82-180 120-270 180-390 Marking V DF WEJ ELECTRONIC CO.,LTD Http:// www.wej.cn E-mail:[email protected] RoHS 2SD1898 Typical Characteristics WEJ ELECTRONIC CO.,LTD Http:// www.wej.cn 2SD1898 E-mail:[email protected]