RoHS BC847S Multi-Chip TRANSISTOR (NPN) D T ,. L SOT-363 FEATURES Power dissipation : PCM 300 mW (Tamb=25℃) Collector current ICM : 200 mA Collector-base voltage V V(BR)CBO : 50 Operating and storage junction temperature range IC TJ,Tstg: -55℃to +150℃ MARKING: 1C ELECTRICAL CHARACTERISTICS (Tamb=25℃ Symbol Parameter unless Test O conditions Collector-base breakdown voltage V(BR)CBO Ic=10µA,IE=0 Collector-emitter breakdown voltage V(BR)CEO Ic=10mA,IB=0 Emitter-base breakdown voltage V(BR)EBO IE=10µA,IC=0 R T C E L Collector cut-off current DC current gain N otherwise ICBO VCB=30V,IE=0 hFE(1) VCE=5V,IC=2mA C O specified) MIN TYP MAX UNIT 50 V 45 V 6 V 15 110 nA 630 VCE(sat)(1) IC=10mA,IB=0.5mA 0.25 V VCE(sat)(2) IC=100mA,IB=5mA 0.65 V 0.7 V 0.77 V Collector-emitter saturation voltage E Base-emitter voltage J E Transition frequency Collector output capacitance VBE(1) VCE=5V,IC=2mA VBE(2) VCE=5V,IC=10mA fT Cob 0.58 VCE=5V,IC=20mA ,f=100MHz VCB=10V,IE=0,f=1MHz 200 MHz 2 pF W WEJ ELECTRONIC CO.,LTD Http:// www.wej.cn E-mail:[email protected] RoHS BC847S Typical Characteristics R T J E O IC C D T ,. L O N C E L E W WEJ ELECTRONIC CO.,LTD Http:// www.wej.cn E-mail:[email protected] RoHS BC847S R T J E O IC C D T ,. L O N C E L E W WEJ ELECTRONIC CO.,LTD Http:// www.wej.cn E-mail:[email protected]