RoHS 2SD886 2SD886 TO—126 FEATURES Power dissipation 1. EMITTER PCM: 1 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range 3. BASE ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter IC V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO N unless otherwise specified) Symbol Collector-base breakdown voltage C O 123 TJ, Tstg: -55℃ to +150℃ O Test R T conditions MIN TYP MAX UNIT Ic=100µA, IE=0 50 V Ic=5mA, IB=0 50 V IE=100µA, IC=0 5 V ICBO C E L VCB=50V, IE=0 1 µA IEBO VEB=3V, IC=0 1 µA hFE(1) VCE=2V, IC=20mA 100 hFE(2) VCE=2V, IC=1A 100 VCE(sat) IC=2A, IB=200mA 0.5 V VBE(sat) IC=2A, IB=200mA 2 V fT VCE=5V, IC=100mA 80 MHz Cob VCB=10V, IE=0, f=1MHz 45 pF Collector cut-off current Emitter cut-off current DC current gain E Collector-emitter saturation voltage J E D T ,. L TRANSISTOR (NPN) Base-emitter saturation voltage Transition frequency Collector output capacitance 400 W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] 2SD886 R T J E O IC C D T ,. L O N C E L E W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]