RoHS 2SC2884 2SC2884 D T ,. L SOT-89 TRANSISTOR (NPN) 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current ICM: 0.8 A Collector-base voltage V(BR)CBO: 35 V Operating and storage junction temperature range IC TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO N C unless otherwise specified) Symbol Collector-base breakdown voltage O 3 O Test R T conditions MIN TYP MAX UNIT Ic=1mA, IE=0 35 V Ic=10mA, IB=0 30 V IE=1m A, IC=0 5 V Base-emitter voltage C E L VBE VCE=1V, IC=10mA Transition frequency fT VCE=5V, IC=10mA 120 MHz Cob VCB=10V, IE=0, f=1MHz 13 pF Collector cut-off current Emitter cut-off current DC current gain E Collector-emitter saturation voltage J E Collector output capacitance W ICBO VCB=35V, IE=0 0.1 µA IEBO VEB=5V, IC=0 0.1 µA hFE(1) VCE=1V, IC=100mA 100 hFE(2) VCE=1V, IC=700mA 35 VCE(sat) IC=500mA, IB=20mA 320 0.5 0.5 V 0.8 V CLASSIFICATION OF hFE(1) Rank Range Marking WEJ ELECTRONIC CO. O Y 100-200 160-320 PO1 PY1 Http:// www.wej.cn E-mail:[email protected] 2SC2884 R T J E O IC C D T ,. L O N C E L E W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]