RoHS 2SA1203 2SA1203 D T ,. L SOT-89 TRANSISTOR (PNP) 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM : 0.5 2 3. EMITTER Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO : -30 V Operating and storage junction temperature range IC TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol R T E J E Base-emitter voltage Transition frequency Collector output capacitance W conditions MIN TYP MAX V V(BR)EBO IE=-1mA, IC=0 -5 V ICBO VCB=-30V, IE=0 -0.1 µA IEBO VEB=-5V, IC=0 -0.1 µA hFE(1) VCE=-2V, IC=-500mA VCE(sat) IC=-1.5A, IB=-30mA -2 V VBE VCE=-2V, IC=-500mA -1 V fT VCE=-2V, IC=-500mA Cob VCB=-10V, IE=0, f=1MHz 100 320 120 MHz 50 CLASSIFICATION OF hFE(1) Rank Range Marking WEJ ELECTRONIC CO. UNIT -30 C E L Collector-emitter saturation voltage O Test Ic=-10mA, IB=0 V(BR)CEO Emitter cut-off current unless otherwise specified) V Collector-emitter breakdown voltage Collector cut-off current C -30 V(BR)CBO Emitter-base breakdown voltage N O 3 Ic=-1mA, IE=0 Collector-base breakdown voltage DC current gain 1 W (Tamb=25℃) O Y 100-200 160-320 HO1 HY1 Http:// www.wej.cn E-mail:[email protected] pF RoHS 2SA1203 R T J E O IC C D T ,. L O N C E L E W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]