RoHS 2SD669A 2SD669A D T ,. L TRANSISTOR (NPN) TO-126C FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER Collector current ICM: 1.5 A Collector-base voltage V(BR)CBO: 180 V Operating and storage junction temperature range 2. COLLECTOR 3. BASE IC TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO N unless otherwise specified) Symbol Collector-base breakdown voltage C O 123 O Test R T conditions MIN TYP MAX UNIT Ic=1mA, IE=0 180 V Ic=10mA, IB=0 160 V IE=1mA, IC=0 5 V Base-emitter voltage C E L VBE VCE=5V, IC=150mA Transition frequency fT VCE=5V, IC=150mA 140 MHz Cob VCB=10V, IE=0, f=1MHz 14 pF Collector cut-off current Emitter cut-off current DC current gain E Collector-emitter saturation voltage J E Collector output capacitance W ICBO VCB=160V, IE=0 10 µA IEBO VEB=4V, IC=0 10 µA hFE(1) VCE=5V, IC=150mA 60 hFE(2) VCE=5V, IC=500mA 30 VCE(sat) IC=500mA, IB=50mA 1 V 1.5 V 200 CLASSIFICATION OF hFE(1) Rank Range WEJ ELECTRONIC CO. B C 60-120 100-200 Http:// www.wej.cn E-mail:[email protected] RoHS 2SD669A R T J E O IC C D T ,. L O N C E L E W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]