WINNERJOIN MMDT5551

RoHS
MMDT5551
MMDT5551
D
T
,. L
SOT-363
Multi-Chip TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM:
0.2
W (Tamb=25℃)
Collector current
ICM:
0.2
A
Collector-base voltage
V(BR)CBO:
180
V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
unless otherwise specified)
Symbol
Test
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
O
Collector cut-off current
IC
C
O
R
T
N
conditions
MIN
TYP
MAX
UNIT
Ic=100µA, IE=0
180
V
Ic=1mA, IB=0
160
V
IE=10µA, IC=0
6
V
VCB=120V, IE=0
50
nA
IEBO
VEB=4V, IC=0
50
nA
hFE(1)
VCE=5V, IC=1mA
80
hFE(2)
VCE=5V, IC=10mA
80
hFE(3)
VCE=5V, IC=50mA
30
VCE(sat)(1)
IC=10mA, IB=1mA
0.15
V
VCE(sat)(2)
IC=50mA, IB=5mA
0.2
V
VBE(sat)(1)
IC=10mA, IB=1mA
1
V
VBE(sat)(2)
IC=50mA, IB=5mA
1
V
fT
VCE=10V, IC=10mA, f=100MHz
300
MHz
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
6
pF
Noise figure
NF
8
dB
ICBO
C
E
L
Emitter cut-off current
DC current gain
E
Collector-emitter saturation voltage
J
E
Base-emitter saturation voltage
W
Transition frequency
VCE=5V, Ic=200µA,
f=1KHz, Rg=1KΩ
100
250
CLASSIFICATION OF hFE(1)
Marking
K4N
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]