RoHS MMDT5551 MMDT5551 D T ,. L SOT-363 Multi-Chip TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 180 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter unless otherwise specified) Symbol Test Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO O Collector cut-off current IC C O R T N conditions MIN TYP MAX UNIT Ic=100µA, IE=0 180 V Ic=1mA, IB=0 160 V IE=10µA, IC=0 6 V VCB=120V, IE=0 50 nA IEBO VEB=4V, IC=0 50 nA hFE(1) VCE=5V, IC=1mA 80 hFE(2) VCE=5V, IC=10mA 80 hFE(3) VCE=5V, IC=50mA 30 VCE(sat)(1) IC=10mA, IB=1mA 0.15 V VCE(sat)(2) IC=50mA, IB=5mA 0.2 V VBE(sat)(1) IC=10mA, IB=1mA 1 V VBE(sat)(2) IC=50mA, IB=5mA 1 V fT VCE=10V, IC=10mA, f=100MHz 300 MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 6 pF Noise figure NF 8 dB ICBO C E L Emitter cut-off current DC current gain E Collector-emitter saturation voltage J E Base-emitter saturation voltage W Transition frequency VCE=5V, Ic=200µA, f=1KHz, Rg=1KΩ 100 250 CLASSIFICATION OF hFE(1) Marking K4N WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]