RoHS MMBT4401LT1 TRANSISTOR (NPN) Features Power dissipation 。 P C M : 0.225 W (Tamb=25 C) Pluse Drain I CM : 0.6 mA Reverse Voltage V (BR)CBO : 60V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C 3 1 2 R T C E L Characteristic Symbol C 2.4 1.3 0.95 N O 0.95 IC 1.BASE 2.EMITTER 3.COLLECTOR 0.4 1. 2.9 1.9 Electrical Characteristics D T ,. L O SOT-23 Unit:mm 。 (Ta=25 C) Test Condition Min. Typ. Max. Unit V (BR)CBO I C =100 A, I E =0 60 V V (BR)CEO I C =1 mA, I B =0 40 V V (BR)EBO I E =100 A, I C =0 6 V Collector Cut-off Current I CBO V CB =50V, I E =0 0.1 A Collector Cut-off Current I CEO V CB =35V, I B =0 0.1 A Emitter Cut-off Current I EBO V EB =5V, I C =0 0.1 A H FE(1) V CE =1V, I C =150mA H FE(2) V CE =2, I C =500mA Collector-Emitter Saturation Voltage V CE(sat) I C =150mA, I B =15mA 0.4 V Base-emitter saturatio voltage V BE(sat) I C =150mA, I B =15mA 0.95 V Transition Frequency fT V CE =10V, I C =20mA ,f=100MHz Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage J E E DC Current Gain (Note) W WEJ ELECTRONIC CO. Http:// www.wej.cn 100 300 40 250 E-mail:[email protected] Mhz RoHS MMBT4401LT1 h FE , NORMALIZED CURRENT GAIN Typical Characteristics 3.0 V CE =1.0V V CE =10V 2.0 。 T J =125 C 。 +25 C 1.0 。 -55 C 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC 1.0 0.8 0.6 I C =1.0mA 0.4 C E L 0.2 0 0.005 0.01 J E W R T 10mA 0.02 0.03 0.05 0.07 0.1 E 0.2 0.3 N O 0.5 100 100mA 0.7 1.0 200 300 500 500mA 2.0 3.0 5.0 7.0 10 20 30 I B, BASE CURRENT (mA) Collector Saturation Region 1.0 VOLTAGE (VOLTS) V CE COLLECTOR- EMITTER VOLTAGE (VOLTS) DC Current Gain C 50 70 I C, COLLECTOR CURRENT (mA) D T ,. L O 。 T J =25 C 0.8 V BE(sat) @I C /I B =10 0.6 V BE(sat) @V CE =10V 0.4 0.2 V CE(sat) @I C /I B =10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 I C, COLLECTOR CURRENT (mA) “On”Voltages WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] 50