RoHS S8050 S8050 TRANSISTOR (NPN) FEATURES Power dissipation PCM: D T ,. L TO-92 1. EMITTER 0.625 2. BASE W (Tamb=25℃) 3. COLLECTOR Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ IC N C 1 2 3 O ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol O Test R T conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100µA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1mA, IB=0 25 V V(BR)EBO IE= 100µA, IC=0 5 V ICBO VCB= 40V, IE=0 0.1 µA ICEO VCE= 20V, IB=0 0.1 µA IEBO VEB= 5V, IC=0 0.1 µA hFE(1) VCE= 1V, IC= 50mA 85 hFE(2) VCE= 1V, IC= 500mA 50 Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50 mA 0.6 V Base-emitter saturation voltage VBE(sat) IC=500mA, IB=50 mA 1.2 V fT VCE= 6 V, IC=20mA f =30MHz C E L Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current J E DC current gain W E Transition frequency 300 150 MHz CLASSIFICATION OF hFE(1) Rank Range B C D 85-160 120-200 160-300 WEJ ELECTRONIC CO.,LTD Http:// www.wej.cn E-mail:[email protected] RoHS S8050 D T VCE = 1V 250 125 °C 200 25 °C 150 100 - 40 ºC 50 1 IC 10 100 - COLLECTOR CURRENT (A) 1000 Base-Emitter Saturation Voltage vs Collector Current 1.2 β = 10 1 - 40 ºC 25 °C 0.8 0.6 0.4 10 J E R T C E L 100 I C - COLLECTOR CURRENT (mA) E 1000 VCESAT- COLLECTOR EMITTER VOLTAGE (V) 300 Collector-Emitter Saturation Voltage vs Collector Current 0.4 β = 10 0.3 ,. L O 125 °C 0.2 25 °C 0.1 V BEON - BASE EMITTER ON VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current VBESAT- BASE EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Characteristics 0 10 C - 40 ºC 100 I C - COLLECTOR CURRENT (mA) IC 1000 Base Emitter ON Voltage vs Collector Current N 1 O 0.8 0.6 0.4 - 40 ºC V 0.2 0 25 °C 1 CE = 1V 10 100 I C - COLLECTOR CURRENT (mA) 1000 W WEJ ELECTRONIC CO.,LTD Http:// www.wej.cn E-mail:[email protected]