Unitpoower US2402 N-Channel Enhancement Mode MOSFET D PRODUCT SUMMARY V(BR)DSS 20V RDS(ON) ID 50m 3A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage TC = 25 °C Continuous Drain Current Pulsed Drain Current TC = 100 °C Avalanche Current L = 0.1mH TC = 25 °C Power Dissipation LIMITS UNITS VGS ±16 V 3 ID 1 Avalanche Energy SYMBOL 1 IDM 10 IAS 4.5 EAS 1 Operating Junction & Storage Temperature Range mJ 0.75 PD TC = 100 °C A W 0.3 Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Ambient 1 TYPICAL MAXIMUM UNITS 166 °C / W RθJA Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC V(BR)DSS VGS = 0V, ID = 250µA 20 VGS(th) VDS = VGS, ID = 250µA 0.4 Gate-Body Leakage IGSS VDS = 0V, VGS = ±16V ±100 Zero Gate Voltage Drain Current IDSS VDS = 16V, VGS = 0V 1 VDS = 12V, VGS = 0V, TJ = 125 °C 10 Drain-Source Breakdown Voltage Gate Threshold Voltage 1 On-State Drain Current ID(ON) Drain-Source On-State 1 Resistance RDS(ON) Forward Transconductance 1 VDS = 10V, VGS = 4.5V gfs REV1.0 1 0.8 1.2 10 V nA µA A VGS = 2.5V, ID = 1.5A 55 85 VGS = 4.5V, ID = 3A 37 50 VDS = 5V, ID = 3A 13 m S Unitpoower US2402 DYNAMIC Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge 2 VGS = 0V, VDS = 10V, f = 1MHz Gate-Source Charge 2 Gate-Drain Charge VDS =10V, VGS = 4.5V, Qgs ID = 3A Qgd 2 2 Rise Time td(on) 2 2 Fall Time td(off) 4.3 nC 0.6 1.9 4.2 VDD = 10V, tr Turn-Off Delay Time pF 117 81 Qg 2 Turn-On Delay Time 266 47.5 nS 11 ID ≅ 3A, VGS = 4.5V, RGEN = 3.3 tf 5 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current Forward Voltage 1 2 1 IS VSD IF = 3A, VGS = 0V 0.6 A 1.3 V Reverse Recovery Time trr 110 nS Reverse Recovery Charge Qrr 440 nC Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2 Independent of operating temperature. . REV1.0 2 Unitpoower US2402 Output Characteristics Transfer Characteristics V G S = 4.5V 7 .5 6 4 .5 V G S = 3.5V 3 1 .5 0 RDS(ON)ON-Resistance(OHM) 8 ID, Drain-To-Source Current(A) ID, Drain-To-Source Current(A) 9 V G S = 2.5V 0 1 2 3 4 5 6 4 T J= 1 2 5 ° C T J= 2 5 ° C 2 T J = -2 0 ° C 0 0 .0 1 .0 5 .0 On-Resistance VS Temperature Capacitance Characteristic RDS(ON) x 1.8 3.50E-10 3.00E-10 C , Capacitance RDS(ON) x 1.6 RDS(ON) x 1.4 RDS(ON) x 1.2 RDS(ON) x 1.0 RDS(ON) x 0.8 RDS(ON) x 0.6 - 50 ID = 3A 0 25 50 75 100 125 2.00E-10 1.50E-10 1.00E-10 5.00E-11 VGS = 4.5V - 25 2.50E-10 0.00E+00 150 0 TJ , Junction Temperature(˚C) 5 10 15 20 25 30 VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics Source-Drain Diode Forward Voltage 1.0E+02 ID=3A VDS=4.5V 1.0E+01 IS , Source Current(A) VGS , Gate-To-Source Voltage(V) 4 .0 VGS, Gate-To-Source Voltage(V) 4.00E-10 4 3 .0 VDS, Drain-To-Source Voltage(V) RDS(ON) x 2.0 5 2 .0 3 2 1 0 TJ =150° C 1.0E+00 1.0E-01 TJ =25° C 1.0E-02 1.0E-03 1.0E-04 0 1 2 3 4 0.2 Qg , Total Gate Charge 0.4 0.6 0.8 1.0 1.2 VSD, Source-To-Drain Voltage(V) REV1.0 3 1.4 Unitpoower US2402 Safe Operating Area Single Pulse Maximum Power Dissipation 100 100 SINGLE PULSE RθJA= 166 C/W TA=25 C 10 80 Operation in This Area is Lim ited by RDS(ON) Power(W) ID , Drain Current(A) 90 100us 1 1ms 70 60 50 40 NOTE : 1.V GS= 4.5V 2.TA=25 C 3.RθJA =166 C/W 0.1 4.Single Pulse DC 10m s 30 100ms 1s 20 10 10s 0 0.0001 0.001 0.01 0.01 0.1 1 10 100 VDS, Drain-To-Source Voltage(V) 0.01 1 Single Pulse Time(s) Transient Thermal Resistance Transient Thermal Response Curve r(t) , Normalized Effective 0.1 T1 , Square Wave Pulse Duration[sec] REV1.0 4 10 100 Unitpoower US2402 REV1.0 5