AP9T18GEH/J
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ G-S Diode embedded
D
G
▼ Capable of 2.5V gate drive
BVDSS
20V
RDS(ON)
14mΩ
ID
▼ Surface mount package
▼ RoHS Compliant
40A
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G
G
DS
D
TO-252(H)
S
TO-251(J)
Rating
Units
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
±12
V
ID@TC=25℃
Continuous Drain Current, V GS @ 4.5V
40
A
ID@TC=100℃
Continuous Drain Current, V GS @ 4.5V
25
A
160
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
31
W
Linear Derating Factor
0.25
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
4
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data and specifications subject to change without notice
200523061-1/4
AP9T18GEH/J
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max. Units
20
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
-
-
14
mΩ
VGS=2.5V, ID=10A
-
-
28
mΩ
0.4
-
1.5
V
VDS=5V, ID=20A
-
20
-
S
VDS=20V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=16V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±12V
-
-
±30
uA
ID=20A
-
16
26
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VDS=VGS, ID=250uA
o
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
VGS=0V, ID=250uA
Min.
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=16V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
6
-
nC
2
td(on)
Turn-on Delay Time
VDS=10V
-
8
-
ns
tr
Rise Time
ID=20A
-
84
-
ns
td(off)
Turn-off Delay Time
RG=1.0Ω,VGS=5V
-
19
-
ns
tf
Fall Time
RD=0.5Ω
-
14
-
ns
Ciss
Input Capacitance
VGS=0V
-
1080 1730
pF
Coss
Output Capacitance
VDS=20V
-
205
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
145
-
pF
Rg
Gate Resistance
f=1.0MHz
-
3.6
5.4
Ω
Min.
Typ.
IS=20A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=20A, VGS=0V,
-
26
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
19
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4
AP9T18GEH/J
90
120
70
80
2.5V
60
40
60
2.5V
50
40
30
20
V G =1.5V
V G =1.5V
20
5.0V
4.5V
3.5V
80
ID , Drain Current (A)
100
ID , Drain Current (A)
o
T C = 150 C
5.0V
4.5V
3.5V
o
T C =25 C
10
0
0
0
1
2
3
4
5
6
0
7
1
2
3
4
5
6
7
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
40
1.6
I D =20A
V G =4.5V
I D = 10 A
T C =25 o C
1.4
Normalized RDS(ON)
RDS(ON) (mΩ)
30
20
1.2
1.0
0.8
10
0.6
1
1.5
2
2.5
3
3.5
4
4.5
25
50
75
100
125
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
40.0
16
RDS(ON) (mΩ)
30.0
12
IS(A)
T j =150 o C
T j =25 o C
8
V GS =2.5V
20.0
V GS =4.5V
10.0
4
0
0.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
0
10
20
30
40
50
60
70
I D , Drain Current (A)
Fig 6. On-Resistance vs.
Drain Current
3/4
AP9T18GEH/J
12
I D =20A
10
V DS =10V
V DS =12V
V DS =16V
8
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
10000
14
C iss
1000
6
4
C oss
C rss
2
100
0
0
10
20
30
40
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
1000
ID (A)
100
100us
10
1ms
10ms
100ms
1s
DC
1
0.1
1
10
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
100
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
80
V DS =5V
VG
T j =25 o C
T j =150 o C
QG
ID , Drain Current (A)
60
4.5V
QGS
40
QGD
20
Charge
Q
0
0
1
2
3
4
5
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4