AP9972GI Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low Gate Charge N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Single Drive Requirement ▼ Lower On-resistance BVDSS 60V RDS(ON) 18mΩ ID 35A G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S TO-220CFM(I) The TO-220CFM isolation package is universally preferred for all commercial-industrial through hole applications. Absolute Maximum Ratings Parameter Symbol Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±25 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 35 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 22 A 1 IDM Pulsed Drain Current 120 A PD@TC=25℃ Total Power Dissipation 31.3 W Linear Derating Factor 0.25 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Units Rthj-c Thermal Resistance Junction-case Max. 4 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W Data and specifications subject to change without notice 200105051 AP9972GI Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 60 - - V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.06 - V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=23A - - 18 mΩ VGS=4.5V, ID=12A - - 22 mΩ VDS=VGS, ID=250uA 1 - 3 V VDS=10V, ID=23A - 40 - S VDS=60V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150 C) VDS=48V ,VGS=0V - - 25 uA Gate-Source Leakage VGS=±25V - - ±100 nA ID=23A - 35 56 nC VGS(th) Gate Threshold Voltage gfs Forward Transconductance o IDSS Drain-Source Leakage Current (Tj=25 C) o IGSS 2 VGS=0V, ID=250uA Qg Total Gate Charge Qgs Gate-Source Charge VDS=48V - 9.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 20 - nC VDS=30V - 12 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=35A - 37 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 47 - ns tf Fall Time RD=0.86Ω - 59 - ns Ciss Input Capacitance VGS=0V - 3160 5060 pF Coss Output Capacitance VDS=25V - 280 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 230 - pF Rg Gate Resistance f=1.0MHz - 1.6 2.4 Ω Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=23A, VGS=0V - - 1.2 V trr Reverse Recovery Time IS=23A, VGS=0V, - 36 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 45 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Starting Tj=25oC , VDD=30V , L=1mH , RG=25Ω , IAS=30A. AP9972GI 120 120 10V 7.0V 10V 7.0V o T C = 150 C T C =25 C ID , Drain Current (A) ID , Drain Current (A) 90 o 90 5.0V 4.5V 60 5.0V 4.5V 60 30 V G =3.0V 30 V G =3.0V 0 0 0 0 2 4 6 2 8 4 6 8 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 20 1.6 I D = 12 A T C =25 o C I D =23A V G =10V Normalized RDS(ON) 1.4 RDS(ON) (mΩ ) 18 16 1.2 1.0 0.8 14 0.6 2 4 6 8 10 -50 V GS , Gate-to-Source Voltage (V) 0 50 100 150 o T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 20 1.7 IS(A) T j =150 o C Normalized VGS(th) (V) 15 T j =25 o C 10 1.2 0.7 5 0.2 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 150 AP9972GI f=1.0MHz 12 10000 V DS =48V V DS =38V V DS =30V 8 C iss C (pF) VGS , Gate to Source Voltage (V) I D = 23 A 10 6 1000 4 C oss C rss 2 0 100 0 20 40 60 1 80 5 9 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1000 Normalized Thermal Response (R thjc) 1 100 ID (A) 13 V DS , Drain-to-Source Voltage (V) 100us 10 1ms 10ms 100ms o T C =25 C Single Pulse 1 DC 0.1 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + TC Single Pulse 0.01 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 100 VG V DS =5V 80 ID , Drain Current (A) T j =25 o C QG T j =150 o C 4.5V 60 QGS QGD 40 20 Charge 0 0 2 4 6 8 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Q