AP4420GH/J
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
BVDSS
35V
RDS(ON)
10mΩ
ID
G
52A
S
▼ RoHS Compliant
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
□
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP4420GJ) are available for low-profile applications.
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
35
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current
52
A
ID@TC=100℃
Continuous Drain Current
33
A
200
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
45
W
Linear Derating Factor
0.35
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
2.8
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data & specifications subject to change without notice
200703061-1/4
AP4420GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
35
-
-
V
-
0.01
-
V/℃
VGS=10V, ID=30A
-
-
10
mΩ
VGS=4.5V, ID=15A
-
-
24
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=30A
-
28
-
S
VDS=35V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=150 C)
VDS=28V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=30A
-
16
26
nC
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
Drain-Source Leakage Current (T j=25 C)
o
IGSS
2
VGS=0V, ID=250uA
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=25V
-
6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
9.5
-
nC
VDS=15V
-
9
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=30A
-
74
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
22.5
-
ns
tf
Fall Time
RD=0.5Ω
-
7.7
-
ns
Ciss
Input Capacitance
VGS=0V
-
1520 2430
pF
Coss
Output Capacitance
VDS=25V
-
320
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
230
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.8
2.7
Ω
Min.
Typ.
IS=30A, VGS=0V
-
-
1.2
V
IS=20A, VGS=0V,
-
27
-
ns
dI/dt=100A/µs
-
20
-
nC
Min.
Typ.
-
-
113
mJ
-
15
-
A
Source-Drain Diode
Symbol
Parameter
Test Conditions
2
VSD
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Max. Units
Drain-Source Avalanche Ratings
Symbol
Parameter
Test Conditions
3
EAS
Drain-Source Avalanche Energy
IAS
Drain-Source Avalanche Current
ID=15A, VDD=35V, L=1mH
Max. Units
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.Single Pulse Test.
2/4
AP4420GH/J
120
120
10V
7.0 V
o
T C =25 C
100
ID , Drain Current (A)
100
ID , Drain Current (A)
10V
7 .0V
T C =150 o C
80
5.0V
60
4.5 V
40
80
5.0V
4.5 V
60
40
V G =4.0V
V G = 4.0 V
20
20
0
0
0.0
2.0
4.0
6.0
8.0
0.0
V DS , Drain-to-Source Voltage (V)
4.0
6.0
8.0
10.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
80
I D =30A
V G =10V
I D =15A
T C =25 o C
1.6
Normalized RDS(ON)
60
RDS(ON) (mΩ)
2.0
40
1.2
0.8
20
0.4
0
2
4
6
8
25
10
50
75
100
125
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
50.0
30
25
T j =150 o C
T j =25 o C
40.0
RDS(ON) (mΩ)
IS(A)
20
15
30.0
V GS =4.5V
20.0
10
V GS =10V
10.0
5
0
0.0
0
0.4
0.8
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
0
10
20
30
40
I D , Drain Current (A)
Fig 6. On-Resistance vs.
Drain Current
3/4
AP4420GH/J
f=1.0MHz
10000
I D =30A
12
C iss
V DS =15V
V DS =20V
V DS =25V
1000
C (pF)
VGS , Gate to Source Voltage (V)
16
8
C oss
C rss
100
4
10
0
0
5
10
15
20
25
1
30
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
Normalized Thermal Response (Rthjc)
Duty factor = 0.5
100
ID (A)
100us
10
1ms
10ms
100ms
DC
o
T C =25 C
Single Pulse
1
0
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
120
V DS =5V
VG
ID , Drain Current (A)
100
QG
80
T j =25 o C
T j =150 o C
4.5V
QGS
60
QGD
40
20
Charge
Q
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4