AO3422 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3422 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It offers operation over a wide gate drive range from 2.5V to 12V. This device is suitable for use as a load switch. Standard product AO3422 is Pb-free (meets ROHS & Sony 259 specifications). AO3422L is a Green Product ordering option. AO3422 and AO3422L are electrically identical. VDS (V) = 55V ID = 2.1A (VGS = 4.5V) RDS(ON) < 160mΩ (VGS = 4.5V) RDS(ON) < 200mΩ (VGS = 2.5V) D TO-236 (SOT-23) Top View G G D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25°C Current A TA=70°C ID Pulsed Drain Current B IDM TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C TJ, TSTG Symbol Alpha & Omega Semiconductor, Ltd. Units V V 2.1 1.7 A 10 1.25 0.8 -55 to 150 PD t ≤ 10s Steady-State Steady-State Maximum 55 ±12 RθJA RθJL Typ 75 115 48 W °C Max 100 150 60 Units °C/W °C/W °C/W AO3422 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Source leakage current Gate Threshold Voltage On state drain current ID=10mA, VGS=0V VDS=44V, VGS=0V gFS VSD IS VGS=2.5V, ID=1.5A Forward Transconductance VDS=5V, ID=2.1A Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current 0.6 10 TJ=125°C VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=27.5V, ID=2.1A VGS=10V, VDS=27.5V, RL=12Ω, RGEN=3Ω IF=2.1A, dI/dt=100A/μs IF=2.1A, dI/dt=100A/μs Max Units 55 VDS=0V, VGS=±12V VDS=VGS ID=250μA VGS=4.5V, VDS=5V VGS=4.5V, ID=2.1A Static Drain-Source On-Resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge Typ V TJ=55°C RDS(ON) DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Min Conditions 1.3 1 5 ±100 2 μA nA V A 125 175 157 11 0.78 160 210 200 mΩ 1 1 S V A 214 31 12.6 1.3 300 2.6 0.6 0.8 2.3 2.4 16.5 2 20 17 3.3 nC nC nC ns ns ns ns 30 ns nC 3 mΩ pF pF pF Ω A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev0: Oct 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO3422 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8 10 10V 3.5V 8 6 2.5V ID(A) ID (A) VDS=5V 6 5V 4 4 125°C VGS=2V 2 2 25°C 0 0 0 1 2 3 4 5 1 1.25 VDS (Volts) Fig 1: On-Region characteristics 1.75 2 2.25 2.5 VGS(Volts) Figure 2: Transfer Characteristics 200 Normalized On-Resistance 2 180 RDS(ON) (mΩ) 1.5 VGS=2.5V 160 140 120 VGS=4.5V 100 1.8 VGS=4.5 1.6 1.4 VGS=2.5V 1.2 1 0.8 0 1 2 3 4 5 0 25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 360 1E+00 125°C ID=2.3A 125°C 1E-01 260 IS (A) RDS(ON) (mΩ) 310 210 160 1E-02 25°C 1E-03 110 25°C 1E-04 60 1E-05 10 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 1.4 AO3422 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 400 5 360 VDS=27.5V ID=2.1A Ciss 320 Capacitance (pF) VGS (Volts) 4 3 2 280 240 200 160 Coss 120 Crss 80 1 40 0 0 0 1 2 0 3 5 100.0 Power (W) ID (Amps) 10.0 100μs 0.1s 1.0 10ms 15 15 TJ(Max)=150°C TA=25°C RDS(ON) limited 10 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 1ms 1s TJ(Max)=150°C TA=25°C 10 5 10s DC 0 0.001 0.1 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=100°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000