ANALOGPOWER AM2330N

AM2330N
Analog Power
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
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PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
32 @ VGS = 10V
30
64 @ VGS = 4.5V
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOT-23 saves board space
Fast switching speed
High performance trench technology
ID (A)
5.2
3.7
G
D
S
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Units
VDS
Drain-Source Voltage
30
V
±20
Gate-Source Voltage
VGS
o
TA=25 C
a
Continuous Drain Current
o
5.2
ID
TA=70 C
b
Pulsed Drain Current
a
Continuous Source Current (Diode Conduction)
IDM
30
IS
1.6
o
TA=25 C
a
Power Dissipation
o
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
TJ, Tstg
Steady-State
RθJA
W
0.8
Symbol
t <= 5 sec
A
1.3
PD
TA=70 C
Operating Junction and Storage Temperature Range
A
4.1
o
-55 to 150
Maximum
C
Units
100
o
166
o
C/W
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM2330_C
AM2330N
Analog Power
Parame ter
Symbol
Test Conditions
VGS(th)
IGSS
VDS = VGS, ID = 250 uA
Limits
Unit
Min Typ Max
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
A
ID(on)
Drain-Source On-Resistance
Forward Tranconductance
Diode Forward Voltage
Dynamic
IDSS
A
A
rDS(on)
g fs
VSD
1
3
VDS = 0 V, VGS = 20 V
±100
VDS = 24 V, VGS = 0 V
1
25
VDS = 24 V, VGS = 0 V, T J = 55oC
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 5.2 A
VGS = 4.5 V, ID = 3.7 A
VDS = 15 V, ID = 5.2 A
IS = 2.3 A, VGS = 0 V
20
V
nA
uA
A
32
64
40
0.7
mΩ
S
V
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Qg
Qgs
Qgd
td(on)
tr
t d(off)
tf
VDS = 15 V, VGS = 4.5 V,
ID = 5.2 A
VDD = 25 V, RL = 25 Ω , ID = 1 A,
VGEN = 10 V
4.0
1.1
1.4
16
5
23
3
nC
nS
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur.
Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.
2
PRELIMINARY
Publication Order Number:
DS-AM2330_C
AM2330N
Analog Power
Typical Electrical Characteristics (N-Channel)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
50
VGS = 10V
6.0V
40
4.0V
30
20
3.0V
10
0
0
0.5
1
1.5
2
2
1.7
1.4
4.5V
6.0V
1.1
10V
0.8
0.5
0
VDS, DRAIN-SOURCE VOLTAGE (V)
10
20
30
40
50
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
Figure 2. On-Resistance with Drain Current
1.6
ID = 10A
R DS(O N), ON-Resistan ce
(O HM)
Normalized RDS(on)
0.05
VGS = 10V
I D = 10A
1.4
1.2
1.0
0 .8
0 .6
-50
-2 5
0
25
50
75
10 0
12 5
150
0.04
0.03
0.02
o
T A = 25 C
0.01
0
2
T J Juncation T emperature (C)
4
6
8
10
VGS, Gate To Source Voltage (V)
Figure 3. On-Resistance Variation with Temperature
Figure 4. On-Resistance Variation with
Gate to Source Voltage
60
100
-55C
IS, REVERSE DRAIN CURRENT (A)
VD=5V
I D Drain Current (A)
50
25C
40
30
125C
20
10
0
0
1
2
3
4
5
6
VGS = 0V
10
o
TA = 125 C
1
0.1
o
25 C
0.01
0.001
0.0001
VGS Gate to S o urc e Vo ltage (V)
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
3
PRELIMINARY
Publication Order Number:
DS-AM2330_C
AM2330N
Analog Power
10
1600
f = 1MHz
VGS = 0 V
ID=6.9a
CAPACITANCE (pF)
Vgs Gate-Source Voltage ( V )
Typical Electrical Characteristics (N-Channel)
8
6
4
Ciss
1200
800
Coss
400
Crss
2
0
0
0
0
2
4
6
8
10
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, Charge (nC)
Figure 8. Capacitance Characteristics
50
2.4
SINGLE PULSE
RqJA = 125C/W
TA = 25C
VDS = VGS
2.2
P(pk), Peak Transient Power (W)
Vth, Gate-Source Thresthold Voltage
(V)
Figure 7. Gate Charge Characteristics
ID = 250mA
2
1.8
1.6
1.4
1.2
1
-50 -25
0
25
50
75 100 125 150 175
o
TA, AMBIENT TEMPERATURE ( C)
40
30
20
10
0
0.001
0.01
0.1
1
10
100
t1, TIME (sec)
Figure 10. Single Pulse Maximum Power Dissipation
Figure 9. Threshold Vs Ambient Temperature
Normalized Thermal Transient Junction to Ambient
1
D = 0.5
RqJA(t) = r(t) * RqJA
RqJA = 125 C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
t1
0.01
t2
0.01
TJ - TA = P * RqJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Square Wave Pulse Duration (S)
Figure 11. Transient Thermal Response Curve
4
PRELIMINARY
Publication Order Number:
DS-AM2330_C
AM2330N
Analog Power
Package Information
5
PRELIMINARY
Publication Order Number:
DS-AM2330_C