AO4442 75V N-Channel MOSFET General Description Product Summary The AO4442 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages from 4.5V to 25V. This device is suitable for use as a load switch or in PWM applications. VDS 75V 3.1A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 130mΩ RDS(ON) (at VGS = 4.5V) < 165mΩ SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TA=25°C Pulsed Drain Current C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 2: June 2011 Steady-State Steady-State A 3.1 W 2 TJ, TSTG Symbol t ≤ 10s V 20 PD TA=70°C ±25 2.5 IDM TA=25°C Power Dissipation B Units V 3.1 ID TA=70°C Maximum 75 RθJA RθJL www.aosmd.com -55 to 150 Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 5 AO4442 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=10mA, VGS=0V Typ 75 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 20 TJ=55°C 100 nA 2.4 3 V 100 130 180 220 165 mΩ 1 V 3.5 A 350 pF A RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=2A 120 gFS Forward Transconductance VDS=5V, ID=3.1A 8.2 VSD Diode Forward Voltage IS=1A,VGS=0V 0.79 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance 303 VGS=0V, VDS=37.5V, f=1MHz µA 5 VDS=0V, VGS= ±25V VGS=10V, ID=3.1A 37 2.2 mΩ S pF 17 VGS=0V, VDS=0V, f=1MHz Units V VDS=60V, VGS=0V IDSS Crss Max pF Ω 3 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 5.2 6.5 nC Qg(4.5V) Total Gate Charge 2.46 3.5 nC Qgs Gate Source Charge VGS=10V, VDS=37.5V, ID=3.1A 1 nC Qgd Gate Drain Charge 1.34 nC tD(on) Turn-On DelayTime 4.5 ns tr Turn-On Rise Time 2.3 ns tD(off) Turn-Off DelayTime 15.6 ns tf Turn-Off Fall Time 1.9 ns trr Qrr VGS=10V, VDS=37.5V, RL=12Ω, RGEN=3Ω IF=3.1A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=3.1A, dI/dt=100A/µs 22 30 22 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 2: June 2011 www.aosmd.com Page 2 of 5 AO4442 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 15 5V 10V VDS=5V 4.5V 12 12 6V 9 ID(A) ID (A) 9 4V 6 6 125°C 3 3 25°C VGS=3.5V 0 0 0 1 2 3 4 0 5 1 2.2 200 2 Normalized On-Resistance 220 RDS(ON) (mΩ ) 180 VGS=4.5V 140 120 100 VGS=10V 80 0 2 4 4 5 6 VGS=10V ID=3.1A 1.8 17 5 2 VGS=4.5V10 1.6 1.4 1.2 ID=2A 1 0.8 6 8 0 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 240 1.0E+01 ID=3.1A 220 1.0E+00 40 200 1.0E-01 180 IS (A) RDS(ON) (mΩ ) 3 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 160 2 125°C 160 140 125°C 1.0E-02 1.0E-03 120 25°C 25°C 1.0E-04 100 1.0E-05 80 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 2: June 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO4442 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 500 10 VDS=37.5V ID=3.1A 400 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 300 200 Coss 100 0 Crss 0 0 1 2 3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics 6 0 10 20 30 40 50 VDS (Volts) Figure 8: Capacitance Characteristics 60 10000 100.0 TA=25°C 10µs 1000 100µs 1.0 RDS(ON) limited 0.1 Power (W) ID (Amps) 10.0 1ms 100 10ms TJ(Max)=150°C TA=25°C 10 10s DC 0.0 1 0.01 0.1 1 10 VDS (Volts) 100 1000 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 2: June 2011 www.aosmd.com Page 4 of 5 AO4442 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL V ds Vds DUT Vgs 90 % + Vdd VDC - Rg 1 0% Vgs V gs t d (o n ) tr t d (o ff) to n tf t o ff D iode R ecovery T est C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs V ds - Isd V gs Ig Rev 2: June 2011 L Isd + VD C - IF t rr dI/dt I RM V dd V dd V ds www.aosmd.com Page 5 of 5