AOSMD AO3415A

AO3415A
20V P-Channel MOSFET
General Description
Product Summary
The AO3415A uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 1.8V. This device is suitable
for use as a load switch applications.
VDS
-20V
ID (at VGS=-4.5V)
-4A
RDS(ON) (at VGS= -4.5V)
< 41mΩ
RDS(ON) (at VGS= -2.5V)
< 53mΩ
RDS(ON) (at VGS= -1.8V)
< 65mΩ
ESD protected
SOT23
Top View
Bottom View
D
D
D
G
G
S
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TA=25°C
Pulsed Drain Current C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 2: Sep 2011
Steady-State
Steady-State
A
1.5
W
1
TJ, TSTG
Symbol
t ≤ 10s
V
-30
PD
TA=70°C
±8
-3.5
IDM
TA=25°C
Power Dissipation B
Units
V
-4
ID
TA=70°C
Maximum
-20
RθJA
RθJL
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-55 to 150
Typ
65
85
43
°C
Max
80
100
52
Units
°C/W
°C/W
°C/W
Page 1 of 5
AO3415A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-20
Typ
Max
Units
V
VDS=-20V, VGS=0V
-1
TJ=55°C
-5
µA
±10
µA
-0.57
-0.9
V
34
41
49
59
VGS=-2.5V, ID=-4A
42
53
VGS=-1.8V, ID=-2A
52
65
VGS=-1.5V, ID=-1A
61
mΩ
Forward Transconductance
VDS=-5V, ID=-4A
20
S
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±8V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250µΑ
-0.3
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-30
VGS=-4.5V, ID=-4A
TJ=125°C
RDS(ON)
gFS
Static Drain-Source On-Resistance
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=-4.5V, VDS=-10V, ID=-4A
A
-0.64
mΩ
mΩ
mΩ
-1
V
-2
A
600
751
905
pF
80
115
150
pF
48
80
115
pF
6
13
20
Ω
7.4
9.3
11
nC
0.8
1
1.2
nC
1.3
2.2
3.1
nC
VGS=-4.5V, VDS=-10V, RL=2.5Ω,
RGEN=3Ω
13
ns
9
ns
19
ns
29
ns
trr
Body Diode Reverse Recovery Time
IF=-4A, dI/dt=500A/µs
20
26
32
Qrr
Body Diode Reverse Recovery Charge IF=-4A, dI/dt=500A/µs
40
51
62
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2: Sep 2011
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Page 2 of 5
AO3415A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
-8V
15
-4.5V
VDS=-5V
35
-3.0V
12
30
-2.5V
9
-ID(A)
-ID (A)
25
20
-2.0V
15
10
3
5
125°C
25°C
VGS=-1.5V
0
0
0
1
2
3
4
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
0
5
100
0.5
1
1.5
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
2
Normalized On-Resistance
1.60
VGS=-1.5V
80
RDS(ON) (mΩ
Ω)
6
60
VGS=-1.8V
40
VGS=-2.5V
VGS=-4.5V
ID=-4A, VGS=-4.5V
1.40
ID=-4A, VGS=-2.5V
1.20
ID=-2A, VGS=-1.8V
1.00
0.80
20
0
2
4
6
8
0
10
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.0E+01
120
ID=-4A
1.0E+00
100
-IS (A)
RDS(ON) (mΩ
Ω)
1.0E-01
80
60
125°C
125°C
25°C
1.0E-02
1.0E-03
40
1.0E-04
25°C
1.0E-05
20
0
4
6
8
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 2: Sep 2011
2
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AO3415A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
5
VDS=-10V
ID=-4A
1200
Capacitance (pF)
-VGS (Volts)
4
3
2
1000
Ciss
800
600
400
Coss
1
200
Crss
0
0
0
2
4
6
8
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
12
5
10
15
-VDS (Volts)
Figure 8: Capacitance Characteristics
1000
100.0
TJ(Max)=150°C
TA=25°C
10.0
RDS(ON)
limited
100µs
1ms
1.0
10ms
DC
Power (W)
10µs
-ID (Amps)
20
100
10
100ms
0.1
10s
TJ(Max)=150°C
TA=25°C
1
0.0
0.00001
0.01
0.1
1
10
0.001
0.1
10
1000
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=100°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 2: Sep 2011
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Page 4 of 5
AO3415A
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT
Vgs
Ig
Charge
R esistive Sw itching Test C ircuit & W aveform s
RL
V ds
t o ff
to n
Vgs
-
DUT
Vgs
V DC
td(o n)
t d(o ff)
tr
tf
90%
V dd
+
Rg
V gs
10%
V ds
D iode R e covery Te st C ircuit & W aveform s
Q rr = -
V ds +
Idt
DUT
V gs
Vds Isd
V gs
Ig
Rev 2: Sep 2011
L
-Isd
+ V dd
t rr
dI/dt
-I R M
V dd
VDC
-
-I F
-Vds
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Page 5 of 5