AO4817 25V Dual P-Channel MOSFET General Description Product Summary The AO4817 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. VDS (V) = -30V ID = -8A (VGS = -20V) RDS(ON) < 18mΩ (VGS = -20V) RDS(ON) < 21mΩ (VGS = -10V) ESD Rating: 1.5KV HBM 100% UIS Tested 100% Rg tested SOIC-8 Top View D1 Bottom View D2 Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 G2 S1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Pulsed Drain Current Units V VGS ±25 V ID -6.9 IDM -40 -8 TA=70°C B TA=25°C Power Dissipation A Maximum -30 TA=25°C Continuous Drain Current A Junction and Storage Temperature Range Maximum Junction-to-Lead C -55 to 150 Symbol Alpha & Omega Semiconductor, Ltd. W 1.44 TJ, TSTG t ≤ 10s Steady-State Steady-State A 2 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A S2 RθJA RθJL Typ 50 73 31 °C Max 62.5 110 40 Units °C/W °C/W °C/W AO4817 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±25V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1 ID(ON) On state drain current VGS=-10V, VDS=-5V -40 TJ=55°C VGS=-20V, ID=-8A Static Drain-Source On-Resistance Max TJ=125°C VGS=-10V, ID=-8A Units V VDS=-24V, VGS=0V IDSS RDS(ON) Typ -5 µA ±1 µA -2.8 -3 V 14.1 18 20 25 17.1 21 A mΩ mΩ VGS=-4.5V, ID=-4A 44 mΩ Forward Transconductance VDS=-5V, ID=-8A 15 S VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current gFS DYNAMIC PARAMETERS Ciss Input Capacitance Coss 1760 VGS=0V, VDS=-15V, f=1MHz Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Gate Drain Charge V A 2200 360 VGS=-10V, VDS=-15V, ID=-8A pF 6.4 8 Ω 30 38 nC 7 nC 8 nC 12.5 ns 10.5 ns 40 ns 23 ns tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=-8A, dI/dt=100A/µs 24 Qrr Body Diode Reverse Recovery Charge IF=-8A, dI/dt=100A/µs 16 VGS=-10V, VDS=-15V, RL=1.8Ω, RGEN=3Ω pF pF 255 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg Qgd -1 -2.6 30 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. Rev 3 : Nov. 2010 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4817 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 30 -10V VDS=-5V -5V -6V 20 20 -ID(A) -ID (A) 15 -4.5V 125°C 10 10 25°C 5 VGS=-4V 0 0 0 1 2 3 4 5 2 2.5 -VDS (Volts) Fig 1: On-Region Characteristics 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics 20 1.6 Normalized On-Resistance VGS=-10V RDS(ON) (mΩ ) 19 18 17 16 VGS=-20V 15 14 VGS=-20V ID=-8A 1.4 VGS=-10V ID=-8A 1.2 1 0.8 0 5 10 15 20 25 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 60 ID=-8A 1.0E+00 50 RDS(ON) (mΩ ) 1.0E-01 125°C -IS (A) THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER 1.0E-02 MARKET. APPLICATIONS OR USES AS CRITICAL 40 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 1.0E-03 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 30 125°C FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1.0E-04 25°C 20 1.0E-05 25°C 1.0E-06 10 0 5 10 15 20 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO4817 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2500 10 VDS=-15V ID=-8A 2000 Capacitance (pF) -VGS (Volts) 8 6 4 2 Ciss 1500 1000 Coss 0 0 0 5 10 15 20 25 30 35 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 40 RDS(ON) limited 100µs TJ(Max)=150°C TA=25°C 10µs 30 1ms 10.0 Power (W) -ID (Amps) Crss 500 10ms 0.1s 1.0 1s 10 10s TJ(Max)=150°C TA=25°C DC 0 0.001 0.1 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) 10 20 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, PD FUNCTIONS 0.1AND RELIABILITY WITHOUT NOTICE. Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000