WHXPCB AO4427

万和兴电子有限公司 www.whxpcb.com
AO4427
30V P-Channel MOSFET
General Description
Product Summary
The AO4427 uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications. The
device is ESD protected.
VDS (V) = -30V
ID = -12.5 A (VGS = -20V)
RDS(ON) < 12mΩ (VGS = -20V)
RDS(ON) < 14mΩ (VGS = -10V)
ESD Rating: 2KV HBM
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
AF
Current
B
TA=25°C
Power Dissipation
A
Junction and Storage Temperature Range
Maximum Junction-to-Lead
C
Alpha & Omega Semiconductor, Ltd.
±25
V
ID
-10.5
IDM
-60
W
2.1
TJ, TSTG
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
A
3
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient AF
Maximum Junction-to-Ambient A
Units
V
-12.5
TA=70°C
Pulsed Drain Current
Maximum
-30
RθJA
RθJL
Typ
28
54
21
°C
Max
40
75
30
Units
°C/W
°C/W
°C/W
www.aosmd.com
AO4427
万和兴电子有限公司 www.whxpcb.com
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-30
TJ=55°C
-5
Gate-Body leakage current
VDS=0V, VGS=±25V
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.7
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-60
VGS=-20V, ID=-12.5A
11.5
14
VGS=-4.5V, ID=-5A
32
24
VDS=-5V, ID=-12.5A
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
A
VGS=-10V, ID=-10A
IS=-1A,VGS=0V
Reverse Transfer Capacitance
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V,
ID=-12.5A
-4.2
A
2900
pF
320
448
pF
6.8
10
Ω
41
52
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=-12.5A, dI/dt=100A/µs
28
Qrr
Body Diode Reverse Recovery Charge IF=-12.5A, dI/dt=100A/µs
20
VGS=-10V, VDS=-15V, RL=1.2Ω,
RGEN=3Ω
S
480
3.4
mΩ
mΩ
V
2330
VGS=0V, VDS=-15V, f=1MHz
mΩ
-1
Qgs
Body Diode Reverse Recovery Time
V
12
Diode Forward Voltage
Crss
µA
-3
15
Forward Transconductance
µA
±10
9.4
gFS
Coss
-2.5
12.2
TJ=125°C
VSD
Units
-1
IGSS
Static Drain-Source On-Resistance
Max
V
VDS=-30V, VGS=0V
VGS(th)
RDS(ON)
Typ
pF
nC
10
nC
12
nC
12.8
ns
10.3
ns
49.5
ns
29
ns
35
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Rev8: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4427
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
30
-6V
-10V
VDS=-5V
-5V
20
20
15
-ID(A)
-ID (A)
-4.5V
125°C
10
10
VGS=-4V
5
0
0
0
1
2
3
4
-VDS (Volts)
Figure 1: On-Region Characteristics
5
12
1
1.5
2
2.5
3
3.5
4
4.5
-VGS(Volts)
Figure 2: Transfer Characteristics
5
Normalized On-Resistance
1.6
11
RDS(ON) (mΩ )
25°C
VGS=-10V
ID=-10A
1.4
VGS=-10V
VGS=-10V, VDS=-15V,
10
ID=-12.5A
1.2
9
VGS=-20V
8
VGS=-20V
ID=-12.5A
1
0.8
0
5
10
15
20
25
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
50
1.0E+01
ID=-12.5A
1.0E+00
40
-IS (A)
RDS(ON) (mΩ )
1.0E-01
125°C
30
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
1.0E-02
COMPONENTS IN LIFE SUPPORT DEVICES
125°COR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF
1.0E-03 THE RIGHT TO IMPROVE PRODUCT DESIGN,
20 SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
1.0E-04
25°C
10
25°C
1.0E-05
0
1.0E-06
4
5
6
7
8
9
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics
www.aosmd.com
AO4427
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
10
VDS=-15V
ID=-12.5A
Capacitance (pF)
-VGS (Volts)
Ciss
2500
8
6
4
2
2000
1500
Coss
1000
Crss
500
0
0
0
5
10
15
20
25
30
35
40
-Qg (nC)
Figure 7: Gate-Charge Characteristics
45
0
100.0
5
10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
30
40
RDS(ON)
limited
100µs
TJ(Max)=150°C
TA=25°C
10µs
30
-ID (Amps)
V
GS=-10V, VDS=-15V,
10ms
0.1s
1.0
1s
DC
0
0.001
1
10
100
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Zθ JA Normalized Transient
Thermal Resistance
20
10
0.1
10
ID=-12.5A
10s
TJ(Max)=150°C
TA=25°C
0.1
Power (W)
1ms
10.0
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
PD
FUNCTIONS
AND RELIABILITY WITHOUT NOTICE.
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
0.01
100
1000
www.aosmd.com