AO4852 60V Dual N-Channel MOSFET General Description Product Summary The AO4852 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. As a pair these MOSFETs operate very efficiently in Push Pull and Bridge topologies. VDS (V) = 60V (VGS = 10V) ID = 3.5A RDS(ON) <90mΩ (VGS = 10V) RDS(ON) <105mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View Bottom View D2 D1 Top View S2 G2 S1 G1 1 2 3 4 D2 D2 D1 D1 8 7 6 5 G2 G1 S2 S1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage TA=70°C ID B ±20 V 3.5 3 2.8 2.4 IDM TA=25°C Power Dissipation Units V VGS TA=25°C Continuous Drain Current A Pulsed Drain Current Maximum 10 Sec Steady State 60 Avalanche Current B 2 1.4 1.3 0.9 B Junction and Storage Temperature Range A 9.6 mJ -55 to 150 °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Steady-State EAR TJ, TSTG Symbol RθJA RθJL W 8 IAR Repetitive avalanche energy 0.3mH Maximum Junction-to-Lead C 20 PD TA=70°C A Typ 48 74 33 Max 62.5 90 40 Units °C/W °C/W °C/W AO4852 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min ID=250µA, VGS=0V Units V 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.7 ID(ON) On state drain current VGS=10V, VDS=5V 20 TJ=55°C VGS=10V, ID=3A Static Drain-Source On-Resistance Max 60 VDS=60V, VGS=0V IDSS RDS(ON) Typ TJ=125°C VGS=4.5V, ID=2A 5 µA 100 nA 2.3 2.6 V 79 90 146 159 86 105 mΩ 1 V A mΩ gFS Forward Transconductance VDS=5V, ID=3A 15 VSD Diode Forward Voltage IS=1A,VGS=0V 0.8 ISM Pulsed Body-Diode CurrentB 20 A IS Maximum Body-Diode Continuous Current 2.5 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss 372 Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance S 450 31 VGS=0V, VDS=0V, f=1MHz 1.7 2.6 Ω 7.1 9.2 nC pF 17 SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge pF VGS=0V, VDS=30V, f=1MHz VGS=10V, VDS=30V, ID=3A 3.6 nC 1 nC Qgs Gate Source Charge Qgd Gate Drain Charge 2 tD(on) Turn-On DelayTime 4.1 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=3A, dI/dt=100A/µs 23.4 Qrr Body Diode Reverse Recovery Charge IF=3A, dI/dt=100A/µs 23.2 VGS=10V, VDS=30V, RL=10Ω, RGEN=3Ω pF nC 5.3 2.1 ns ns 15 ns 2.1 ns 29 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using < 300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. Rev1: Nov. 2010 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4852 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 16 10V 4.5V 16 6V VDS=5V 4V 12 ID(A) ID (A) 12 8 125°C 8 3.5V 4 4 25°C VGS=3V 0 0 0 1 2 3 4 5 2 2.4 VDS (Volts) Fig 1: On-Region Characteristics 3.2 3.6 4 VGS(Volts) Figure 2: Transfer Characteristics 105 Normalized On-Resistance 2.2 95 VGS=4.5V RDS(ON) (mΩ ) 2.8 85 75 VGS=10V 65 55 45 2 ID=2A 1.8 Vgs=4.5v 1.6 VGS=10V 1.4 ID=3A 1.2 1 0.8 0 2 4 6 8 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 180 1.0E+01 ID=3A 1.0E+00 150 1.0E-01 IS (A) RDS(ON) (mΩ ) 125°C 120 90 125°C 1.0E-02 25°C 25°C 60 1.0E-03 1.0E-04 30 1.0E-05 0 2 3 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4852 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 10 VDS=30V ID=3A 500 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 400 300 200 Coss 100 0 Crss 0 0 1 2 3 4 5 6 7 8 0 10 Qg (nC) Figure 7: Gate-Charge Characteristics 30 50 60 35 TJ(Max)=150°C TA=25°C 30 10µs ID (Amps) 25 100µs 1ms Power (W) 10.0 10ms 0.1s 1.0 1s TJ(Max)=150°C TA=25°C 20 15 10 10s 5 DC 0 0.001 0.1 0.1 40 VDS (Volts) Figure 8: Capacitance Characteristics RDS(ON) limited 100.0 20 1 10 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com