AO6404 20V N-Channel MOSFET General Description Product Summary The AO6404 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. VDS (V) = 20V ID = 8.6A (VGS = 10V) RDS(ON) < 17mΩ (VGS = 10V) RDS(ON) < 18mΩ (VGS = 4.5V) RDS(ON) < 24mΩ (VGS = 2.5V) RDS(ON) < 33mΩ (VGS = 1.8V) ESD Rating: 2000V HBM TSOP6 Top View D Bottom View Top View D 1 6 D D 2 5 D G 3 4 S G S Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Units V VGS ±12 V ID 6.8 IDM 30 TA=25°C Continuous Drain Current A 8.6 TA=70°C Pulsed Drain Current B TA=25°C Power Dissipation Maximum 20 A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C 2 PD TA=70°C -55 to 150 Symbol Alpha & Omega Semiconductor, Ltd. W 1.28 TJ, TSTG t ≤ 10s Steady-State Steady-State A RθJA RθJL Typ 45 70 33 °C Max 62.5 110 50 Units °C/W °C/W °C/W AO6404 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C 25 Gate-Body leakage current VDS=0V, VGS=±10V Gate-Source Breakdown Voltage VDS=0V, IG=±250uA ±12 VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.5 ID(ON) On state drain current VGS=4.5V, VDS=5V 30 10 VGS=10V, ID=8.5A TJ=125°C 0.75 17 16 20 14.8 18 mΩ 18.8 24 mΩ VGS=1.8V, ID=3A 25.5 33 mΩ VSD Diode Forward Voltage 0.73 Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Gate resistance mΩ VGS=2.5V, ID=4A IS Rg V VGS=4.5V, ID=5A IS=1A,VGS=0V Crss 1 13.4 36 Output Capacitance µA A VDS=5V, ID=8A Coss µA V Forward Transconductance gFS Units V 10 BVGSO Static Drain-Source On-Resistance Max 20 VDS=16V, VGS=0V IGSS RDS(ON) Typ VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg VGS=4.5V, VDS=10V, ID=8.5A S 1 V 2.9 A 1810 pF 232 pF 200 pF 1.6 Ω 17.9 nC Qgs Gate Source Charge 1.5 nC Qgd Gate Drain Charge 4.7 nC tD(on) Turn-On DelayTime 2.5 ns tr Turn-On Rise Time 7.2 ns tD(off) Turn-Off DelayTime 49 ns tf trr Turn-Off Fall Time 10.8 ns IF=8.5A, dI/dt=100A/µs 22 Qrr Body Diode Reverse Recovery Charge IF=8.5A, dI/dt=100A/µs 9.8 ns nC Body Diode Reverse Recovery Time VGS=10V, VDS=10V, RL=1.2Ω, RGEN=3Ω A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev4: Feb. 2012 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AO6404 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 10 35 30 2.5V 4.5V VDS=5V 2V 25 30 20 ID(A) ID (A) 25 20 15 15 125°C 10 10 VGS=1.5V 5 25°C 5 0 0 0 1 2 3 4 5 0 0.5 1 1.5 2 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 30 1.6 ID=5A Normalized On-Resistance VGS=1.8V 25 RDS(ON) (mΩ Ω) 2.5 VGS=2.5V 20 VGS=4.5V 15 VGS=10V 10 5 VGS=4.5V VGS=2.5V 1.4 VGS=10V 1.2 VGS=1.8V 1 0.8 0 5 10 15 20 0 25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 40 10 ID=5A 35 1 25 125°C 0.1 125°C IS (A) RDS(ON) (mΩ Ω) 30 20 0.01 15 25°C 0.001 10 25°C 5 0.0001 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.00001 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO6404 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 5 VDS=10V ID=8A 2500 Capacitance (pF) VGS (Volts) 4 3 2 1500 1000 1 Coss 500 Crss 0 0 0 4 8 12 16 20 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 40 TJ(Max)=150°C TA=25°C RDS(ON) limited 100µs 1ms 30 10µs Power (W) 10.0 5 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 ID (Amps) Ciss 2000 10ms 1.0 1s 0.1s 20 10 TJ(Max)=150°C TA=25°C DC 0 0.1 0.1 1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 100 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/(Ton+Toff) TJ,PK=TA+PDM.ZθJA.RθJA RθJA=110°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Toff Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000