AOSMD AOD413A

AOD413A
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD413A uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. With the excellent thermal resistance of the
DPAK package, this device is well suited for high
current load applications.
VDS (V) = -40V
(VGS = -10V)
ID = -12A
RDS(ON) < 44mΩ (VGS = -10V)
RDS(ON) < 66mΩ (VGS = -4.5V)
100% UIS Tested!
100% Rg Tested!
-RoHS Compliant
-Halogen Free*
TO-252
D-PAK
Top View
D
D
Bottom View
G
G
S
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current B,H
Pulsed Drain Current
TC=100°C
Avalanche Current C
Power Dissipation B
C
±20
V
TA=70°C
Alpha & Omega Semiconductor, Ltd.
IDM
-30
IAR
-20
mJ
20
25
W
2.5
1.6
-55 to 175
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
A
50
PDSM
Junction and Storage Temperature Range
Maximum Junction-to-Case F
-9
PD
TC=100°C
Thermal Characteristics
Parameter
A,G
Maximum Junction-to-Ambient
A,G
Maximum Junction-to-Ambient
ID
EAR
TA=25°C
Power Dissipation A
Units
V
-12
C
Repetitive avalanche energy L=0.1mH
TC=25°C
Maximum
-40
RθJA
RθJC
Typ
16.7
40
2
°C
Max
25
50
3
Units
°C/W
°C/W
°C/W
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AOD413A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID= -250µA, VGS=0V
-40
-1
TJ=55°C
-5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID= -250µA
-1.7
ID(ON)
On state drain current
VGS= -10V, VDS= -5V
-30
±100
VGS= -10V, ID= -12A
Static Drain-Source On-Resistance
TJ=125°C
22
Diode Forward Voltage
IS= -1A,VGS=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg (-10V) Total Gate Charge
Qg (-4.5V) Total Gate Charge
-0.76
900
VGS=0V, VDS= -20V, f=1MHz
VGS= -10V, VDS= -20V,
ID= -12A
Units
µA
nA
V
A
66
VSD
Rg
44
65
IS
Output Capacitance
36
52
VDS= -5V, ID= -12A
Reverse Transfer Capacitance
-3
52
Forward Transconductance
Coss
-2
VGS= -4.5V, ID= -8A
gFS
Crss
Max
V
VDS= -40V, VGS=0V
VGS(th)
RDS(ON)
Typ
mΩ
S
-1
V
-2.5
A
1125
pF
97
pF
68
pF
14
Ω
16.2
21
nC
7.2
9.4
nC
Qgs
Gate Source Charge
Qgd
tD(on)
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF= -12A, dI/dt=100A/µs
Qrr
Body Diode Reverse Recovery Charge IF= -12A, dI/dt=100A/µs
13.8
3.8
nC
Gate Drain Charge
3.5
nC
Turn-On DelayTime
6.2
ns
Body Diode Reverse Recovery Time
VGS= -10V, VDS= -20V, RL=1.6Ω,
RGEN=3Ω
8.4
ns
44.8
ns
41.2
ns
21.2
ns
nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating IDSM
are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
-20
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
20
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted
to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. The maximum current rating is limited by bond-wires.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev1: Oct 2008
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AOD413A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
30
VDS= -5V
-4.5V
-10V
25
25
-4.0V
20
-ID(A)
-ID (A)
20
15
15
-3.5V
10
10
5
5
125°C
VGS= -2.5V
25°C
0
0
0
1
2
3
4
5
1.5
-VDS (Volts)
Figure 1: On-Region Characteristics
2.5
3
3.5
4
4.5
5
-VGS(Volts)
Figure 2: Transfer Characteristics
70
1.8
60
Normalized On-Resistance
65
RDS(ON) (mΩ )
2
VGS= -4.5V
55
50
45
40
VGS= -10V
35
30
1.6
VGS= -10V
ID= -12A
1.4
1.2
VGS= -4.5V
ID= -8A
1
0.8
0.6
0
5
10
15
20
-60
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
-30
0
30
60
90
120
150
180
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
120
100
ID= -12A
10
-20
20
100
80
-IS (A)
RDS(ON) (mΩ )
1
125°C
60
0.1
125°C
25°C
0.01
0.001
25°C
40
0.0001
20
0.00001
3
4
5
6
7
8
9
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-vSD (Volts)
Figure 6: Body-Diode Characteristics
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AOD413A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1200
10
VDS= -20V
ID= -12A
1000
Capacitance (pF)
-VGS (Volts)
8
6
4
Ciss
800
600
400
Coss
2
200
Crss
0
0
0
2
4
6
8
10
12
14
16
0
18
5
10
15
20
25
35
40
10000
100
TJ(Max)=175°C
TC=25°C
10µs
RDS(ON)
limited
10
100µs
1000
1ms
10ms
DC
1
Power (W)
-ID (Amps)
30
-VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
TJ(Max)=175°C
TC=25°C
0.1
0.1
1
10
10
0.00001
100
-VDS (Volts)
Zθ Jc Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=Tc+PDM.ZθJC.RθJC
RθJC=3°C/W
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
100
In descending order
-20pulse
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single
20
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
T
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
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AOD413A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
50
-Current rating ID(A)
Power Dissipation (W)
60
40
30
20
15
10
5
10
0
0
0
25
50
75
100
125
150
175
0
TCASE (°C)
Figure 12: Power De-rating (Note B)
25
50
75
100
125
150
175
TCASE (°C)
Figure 13: Current De-rating (Note B)
1000
Power (W)
TJ(Max)=150°C
TA=25°C
100
10
1
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
Zθ JA Normalized Transient
Thermal Resistance
10
150
-20
20
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
0.01
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
Ton
1
T
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
Alpha & Omega Semiconductor, Ltd.
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AOD413A
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgs
Vds
Qgd
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
td(on)
Vgs
-
DUT
Vgs
td(off)
tr
tf
90%
Vdd
VDC
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
EAR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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