AOD454A N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD454A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. VDS (V) = 40V ID = 12A (V GS = 10V) RDS(ON) < 30mΩ (VGS = 10V) RDS(ON) < 40mΩ (VGS = 4.5V) 100% UIS Tested! 100% Rg Tested! -RoHS Compliant -Halogen Free* TO-252 D-PAK Bottom View Top View D D G G S S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current B,H Pulsed Drain Current TC=100°C Avalanche Current C Power Dissipation B C ±20 V TA=70°C Maximum Junction-to-Case F Alpha & Omega Semiconductor, Ltd. 10 IDM 40 IAR 14 EAR 9.8 mJ 18 W 2.5 1.6 -55 to 175 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State A 37 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Junction-to-Ambient A,G ID PD TC=100°C TA=25°C Power Dissipation A Units V 12 C Repetitive avalanche energy L=0.1mH TC=25°C Maximum 40 RθJA RθJC Typ 16.7 40 3 °C Max 25 50 4 Units °C/W °C/W °C/W www.aosmd.com AOD454A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 1 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.7 ID(ON) On state drain current VGS=10V, VDS=5V 40 TJ=55°C TJ=125°C 25 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time 0.76 516 VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=20V, ID=12A VGS=10V, VDS=20V, RL=1.6Ω, RGEN=3Ω µA nA V A 40 IS Rg 30 46 VSD Reverse Transfer Capacitance 24 30 VDS=5V, ID=12A Output Capacitance 3 37 Forward Transconductance Coss 2.5 VGS=4.5V, ID=8A gFS Crss 5 ±100 VGS=10V, ID=12A Units V VDS=40V, VGS=0V Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 40 IDSS RDS(ON) Typ mΩ S 1 V 2.5 A 650 pF 82 pF 43 pF 4.6 Ω 8.3 10.8 nC 2.3 nC 1.6 nC 6.4 ns 3.6 ns tD(off) Turn-Off DelayTime 16.2 ns tf trr Turn-Off Fall Time 6.6 ns IF=12A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/µs 18 Qrr 24 10 ns nC A: The value of R θJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating IDSM are based on T J(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device TBD mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating. TBD G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. H. The maximum current rating is limited by bond-wires. *This device is guaranteed green after data code 8X11 (Sep 1 ST 2008). Rev2: Oct 2008 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD454A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 40 10V VDS=5V 4.0V 4.5V 30 4.0V ID(A) ID (A) 30 20 10 20 125°C 10 3.5V 25°C VGS=3.0V 0 0 0 1 2 3 4 1.5 5 2 VDS (Volts) Figure 1: On-Region Characteristics 36 1.8 RDS(ON) (mΩ ) Normalized On-Resistance 2 VGS=4.5V 32 30 28 26 VGS=10V 24 22 3.5 4 4.5 5 VGS=10V ID=12A 1.6 1.4 VGS=4.5V ID=8A 1.2 1 0.8 0.6 0 5 10 15 20 -50 -25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature mJ 80 100 150 ID=12A 70 10 60 1 50 IS (A) RDS(ON) (mΩ ) 3 VGS(Volts) Figure 2: Transfer Characteristics 38 34 2.5 125°C 40 0.1 125° 0.01 25°C 25°C 30 0.001 0.0001 20 0.00001 10 3 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOD454A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 10 Capacitance (pF) 8 VGS (Volts) Ciss VDS=20V ID=12A 6 4 Coss 100 Crss 2 10 0 0 1 2 3 4 5 6 7 8 0 9 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 30 35 40 VDS (Volts) Figure 8: Capacitance Characteristics 10000 100 TJ(Max)=175°C TC=25°C 10µs RDS(ON) limited Power (W) ID (Amps) 100µs 10 1ms 10ms 100ms 1 DC TJ(Max)=175°C TC=25°C 0.1 1 10 VDS (Volts) Zθ Jc Normalized Transient Thermal Resistance D=Ton/T TJ,PK=Tc+PDM.ZθJC.RθJC RθJC=3°C/W 100 10 0.00001 100 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 1000 150 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 T 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD454A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 50 40 Current rating ID(A) Power Dissipation (W) 60 40 30 20 30 20 10 10 0 0 0 25 50 75 100 125 150 175 0 25 TCASE (°C) Figure 12: Power De-rating (Note B) 50 75 100 125 150 175 TCASE (°C) Figure 13: Current De-rating (Note B) 1000 Power (W) TJ(Max)=150°C TA=25°C 100 10 1 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G) Zθ JA Normalized Transient Thermal Resistance 10 150 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD 0.01 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 Ton 1 T 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note G) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD454A G ate C harge Test C ircuit & W aveform V gs Qg 10V + + Vds VD C - Q gs Q gd VD C - DUT Vgs Ig C harge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr t d(off) ton tf t off U nclam ped Inductive S witching (UIS) Test Circuit & W aveform s L 2 E A R= 1/2 LIA R Vds BVD SS Vds Id + Vdd Vgs Vgs I AR V DC - Rg Id DU T Vgs Vgs D iode R ecovery Test C ircuit & W aveform s Q rr = - Idt V ds + DUT Vds - Isd V gs V gs L Isd + V dd Alpha & Omega Semiconductor, Ltd. - t rr dI/dt I RM Vdd V DC Ig IF Vds www.aosmd.com