AOD454A N-Channel Enhancement Mode Field Effect Transistor

AOD454A
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD454A uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. With the excellent thermal resistance of the
DPAK package, this device is well suited for high
current load applications.
VDS (V) = 40V
(VGS = 10V)
ID = 20A
RDS(ON) < 30mΩ (VGS = 10V)
RDS(ON) < 40mΩ (VGS = 4.5V)
100% UIS Tested!
100% Rg Tested!
-RoHS Compliant
-Halogen Free*
TO252
DPAK
Top View
Bottom View
D
D
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current B,H
Pulsed Drain Current
TC=100°C
Avalanche Current C
Power Dissipation B
C
±20
V
TA=70°C
Maximum Junction-to-Case F
Alpha & Omega Semiconductor, Ltd.
15
IDM
40
IAR
14
EAR
9.8
mJ
18
W
2.5
1.6
TJ, TSTG
-55 to 175
Symbol
t ≤ 10s
Steady-State
Steady-State
A
37
PDSM
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A,G
Maximum Junction-to-Ambient
A,G
Maximum Junction-to-Ambient
ID
PD
TC=100°C
TA=25°C
Power Dissipation A
Units
V
20
C
Repetitive avalanche energy L=0.1mH
TC=25°C
Maximum
40
RθJA
RθJC
Typ
16.7
40
3
°C
Max
25
50
4
Units
°C/W
°C/W
°C/W
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AOD454A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
1
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.7
ID(ON)
On state drain current
VGS=10V, VDS=5V
40
TJ=55°C
TJ=125°C
25
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
0.76
516
VGS=0V, VDS=20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=20V,
ID=12A
VGS=10V, VDS=20V, RL=1.6Ω,
RGEN=3Ω
nA
V
mΩ
S
1
V
2.5
A
650
pF
82
pF
43
pF
4.6
Ω
8.3
10.8
nC
2.3
nC
1.6
nC
6.4
ns
3.6
ns
16.2
ns
6.6
ns
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=12A, dI/dt=100A/µs
18
Qrr
Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/µs
10
Body Diode Reverse Recovery Time
µA
A
40
VSD
SWITCHING PARAMETERS
Total Gate Charge
Qg
30
46
IS
Reverse Transfer Capacitance
24
30
VDS=5V, ID=12A
Output Capacitance
3
37
Forward Transconductance
Coss
2.5
VGS=4.5V, ID=8A
gFS
Crss
5
±100
VGS=10V, ID=12A
Units
V
VDS=40V, VGS=0V
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
40
IDSS
RDS(ON)
Typ
24
ns
nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating IDSM
are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the deviceTBD
mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g.
TBD
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. The maximum current rating is limited by bond-wires.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev3: July 2010
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AOD454A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
40
10V
VDS=5V
4.0V
4.5V
30
4.0V
ID(A)
ID (A)
30
20
10
20
125°C
10
3.5V
25°C
VGS=3.0V
0
0
0
1
2
3
4
5
1.5
2
VDS (Volts)
Figure 1: On-Region Characteristics
36
1.8
RDS(ON) (mΩ )
Normalized On-Resistance
2
VGS=4.5V
32
30
28
26
VGS=10V
24
22
3.5
4
4.5
5
VGS=10V
ID=12A
1.6
1.4
VGS=4.5V
ID=8A
1.2
1
0.8
0.6
0
5
10
15
20
-50 -25
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0
25
50
75 100 125 150 175 200
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
mJ
80
100
150
ID=12A
70
10
60
1
50
IS (A)
RDS(ON) (mΩ )
3
VGS(Volts)
Figure 2: Transfer Characteristics
38
34
2.5
125°C
40
0.1
125°
0.01
25°C
25°C
30
0.001
0.0001
20
0.00001
10
3
4
5
6
7
8
9
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AOD454A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
10
Capacitance (pF)
8
VGS (Volts)
Ciss
VDS=20V
ID=12A
6
4
Coss
100
Crss
2
10
0
0
1
2
3
4
5
6
7
8
0
9
Qg (nC)
Figure 7: Gate-Charge Characteristics
5
10
15
20
25
30
35
40
VDS (Volts)
Figure 8: Capacitance Characteristics
10000
100
TJ(Max)=175°C
TC=25°C
10µs
100µs
RDS(ON)
limited
Power (W)
ID (Amps)
10
1ms
10ms
100ms
1
DC
TJ(Max)=175°C
TC=25°C
0.1
1
10
VDS (Volts)
Zθ Jc Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=Tc+PDM.ZθJC.RθJC
RθJC=4°C/W
100
10
0.00001
100
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1000
150
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
T
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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AOD454A
60
30
50
25
Current rating ID(A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
30
20
10
20
15
10
5
0
0
0
25
50
75
100
125
150
175
0
25
TCASE (°C)
Figure 12: Power De-rating (Note B)
50
75
100
125
150
175
TCASE (°C)
Figure 13: Current De-rating (Note B)
1000
TJ(Max)=150°C
TA=25°C
Power (W)
100
10
1
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
Zθ JA Normalized Transient
Thermal Resistance
10
150
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
0.01
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
Ton
1
T
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
Alpha & Omega Semiconductor, Ltd.
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AOD454A
G ate C harge Test C ircuit & W aveform
Vgs
Qg
10V
+
+ V ds
VDC
-
Q gs
Q gd
VD C
-
DUT
V gs
Ig
C harge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
U nclam ped Inductive Sw itching (U IS) Test C ircuit & W aveform s
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
D UT
Vgs
Vgs
D iode R ecovery Test C ircuit & W aveform s
Q rr = - Idt
V ds +
DUT
V ds -
Isd
V gs
V gs
L
Isd
+ Vdd
Alpha & Omega Semiconductor, Ltd.
-
t rr
dI/dt
I RM
Vdd
VD C
Ig
IF
V ds
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